Surface phase transition of Cu/Si(111)-(5x5) by scanning tunnelling microscopy and photoemission study

Zhang YP; Yong KS; Chan HSO; Xu GQ; Gao XY; Qi DC; Wang XS; Wee ATS

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Surface phase transition of Cu/Si(111)-(5x5) by scanning tunnelling microscopy and photoemission study

机译：扫描隧道显微镜和光发射研究Cu / Si（111）-（5x5）的表面相变

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The phase transition process from the Si(111)-(7 x 7) surface to the Cu/Si(111)-(5 x 5) surface structure has been studied by scanning tunnelling microscopy and synchrotron radiation photoemission spectroscopy. The nucleation and growth of Cu/Si(111)-(5 x 5) on the Si(111)-(7 x 7) surface progress gradually with the increase in Cu coverage. Cu deposition on the Si(111)-(7 x 7) surface at room temperature may only involve the saturation of the surface dangling bonds, whereas a new surface phase of Cu/Si(111)-(5 x 5) is formed upon annealing, which saturates at a Cu coverage of 0.9 ML. Our experiments clearly show the surface phase transition process of the (5 x 5) structure as a function of the Cu coverage and provide useful insight into the Cu/Si(111)-(5 x 5) structure.

机译：从Si（111）-（7 x 7）表面到Cu / Si（111）-（5 x 5）表面结构的相变过程已通过扫描隧道显微镜和同步加速器辐射光发射光谱进行了研究。随着Cu覆盖率的增加，Cu / Si（111）-（5 x 5）在Si（111）-（7 x 7）表面的形核和生长逐渐进行。室温下在Si（111）-（7 x 7）表面上沉积Cu可能只涉及表面悬空键的饱和，而在表面上形成新的Cu / Si（111）-（5 x 5）表面相。退火，在0.9 ML的Cu覆盖下会饱和。我们的实验清楚地表明（5 x 5）结构的表面相变过程是Cu覆盖率的函数，并提供了对Cu / Si（111）-（5 x 5）结构的有用见解。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2008年第9期|共7页
作者
Zhang YP; Yong KS; Chan HSO; Xu GQ; Gao XY; Qi DC; Wang XS; Wee ATS;
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正文语种 eng
中图分类应用物理学;
关键词
ATOMIC-STRUCTURE; SI(111)-(7X7) SURFACE; ELECTRON-DIFFRACTION; QUASI-5X5 OVERLAYER; CORE LEVELS; GROWTH; INTERFACE; GE; SI; CU;

机译：原子结构;SI（111）-（7X7）表面;电子衍射;准5X5覆盖层;核心层;生长;界面;GE;SI;CU;

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1. Surface phase transition of Cu/Si(111)-(5x5) by scanning tunnelling microscopy and photoemission study [J] . Zhang YP, Yong KS, Chan HSO, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第9期

机译：扫描隧道显微镜和光发射研究Cu / Si（111）-（5x5）的表面相变
2. Atomic configuration and phase transition of Pt-induced nanowires on a Ge(001) surface studied using scanning tunneling microscopy, reflection high-energy positron diffraction, and angle-resolved photoemission spectroscopy [J] . Izumi Mochizuki, Yuki Fukaya, Atsuo Kawasuso, Physical review . 2012,第24期

机译：使用扫描隧道显微镜，反射高能正电子衍射和角度分辨光发射光谱法研究Ge（001）表面上Pt诱导的纳米线的原子构型和相变
3. Enhanced oxidation of Ge(111) surface precovered with Na: scanning tunneling microscopy and X-ray photoemission spectroscopy study [J] . D. Jeon, T. Sakurai, K.D. Lee, Surface Science . 2004,第2a3期

机译：Na覆盖的Ge（111）表面的增强氧化：扫描隧道显微镜和X射线光电子能谱研究
4. Combined Scanning Tunneling Microscopy and Photoemission Studies of the beta-SiC(100) c(4x2) Surface Reconstruction [C] . V. Derycke, P. Fonteneau, V.Yu. Aristov, 3rd European Conference on Silicon Carbide and Related Materials, ECSCRM2000 September 3-7 2000 Kloster Banz, Germany. . 2000

机译：β-SiC（100）c（4x2）表面重建的组合扫描隧道显微镜和光发射研究
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机译：超高真空扫描隧道显微镜的开发。溴暴露下硅（111）和锗（111）表面蚀刻的扫描隧道显微镜研究
6. The Effect of Deposition Time on the Surface Coverage of Sublimation Deposited Solid-Phase Glycine and Proline Molecules Measured by Scanning Tunneling Microscopy [O] . Young-Sang Youn 2020

机译：沉积时间对通过扫描隧道显微镜测量的升华固相甘氨酸和脯氨酸分子的表面覆盖的影响
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机译：通过扫描隧穿显微镜研究的Si表面上的固相外延。扫描 - 隧道显微镜观察Ge固相外延对Si（111）。

Surface phase transition of Cu/Si(111)-(5x5) by scanning tunnelling microscopy and photoemission study

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