Refractive index, oscillator parameters nd optical band gap of e-beam vaporated Ga_(10)Ge_(10)Te_(80) films

Y A EI-Gendy

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Refractive index, oscillator parameters nd optical band gap of e-beam vaporated Ga_(10)Ge_(10)Te_(80) films

机译：电子束汽化Ga_（10）Ge_（10）Te_（80）薄膜的折射率，振荡器参数和光学带隙

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A thin film of the ternary Ga_(10)Ge_(10)Te_(80) compound has been deposited at room temperature on a Corning 7059 glass substrate by the e-beam evaporation technique at vacuum pressure __1.8 × 10~(-3) Pa. X-ray diffraction studies revealed that the as-deposited films and those annealed up to 400 K have an amorphous phase, while those annealed at 450 K are crystalline. The elemental chemical composition of the as-deposited films was confirmed using energy dispersive x-ray analysis. The transmission and reflection spectra of the as-deposited and annealed films at annealing temperature 450 K were recorded at normal light incidence in the wavelength range 600-2500 nm. The refractive index and optical band gap have been calculated for the investigated films. The dispersion parameters, (E0, Ed), static refractive index, n_s(0), static dielectric constant, ε_s, and the carrier concentration to the effective mass ratio, N/m~*, have been calculated. An analysis of the optical absorption spectra revealed an indirect optical transition characterizing the as-deposited films while direct and indirect optical transitions characterized the films annealed at 450 K.

机译：Ga_（10）Ge_（10）Te_（80）三元化合物的薄膜已在室温下通过电子束蒸发技术在真空压力__1.8×10〜（-3）下沉积在Corning 7059玻璃基板上Pa。X射线衍射研究表明，沉积后的薄膜和退火至400 K的薄膜具有非晶相，而在450 K退火的薄膜则为晶体。使用能量色散X射线分析证实了所沉积的膜的元素化学组成。在波长为600-2500 nm的法线入射下，记录退火温度为450 K时沉积和退火的薄膜的透射光谱和反射光谱。已经为所研究的膜计算了折射率和光学带隙。计算出色散参数（E0，Ed），静态折射率n_s（0），静态介电常数ε_s以及载流子浓度与有效质量比N / m〜*。对光吸收光谱的分析揭示了表征沉积薄膜的间接光学跃迁，而表征了在450 K退火的薄膜的直接和间接光学跃迁。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2009年第11期|共6页
作者
Y A EI-Gendy;
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正文语种 eng
中图分类 539C0001;
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Refractive index; oscillator; e-beam;

机译：折射率振荡器电子束;

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1. Refractive index, oscillator parameters nd optical band gap of e-beam vaporated Ga_(10)Ge_(10)Te_(80) films [J] . Y A EI-Gendy Journal of Physics, D. Applied Physics: A Europhysics Journal . 2009,第11期

机译：电子束汽化Ga_（10）Ge_（10）Te_（80）薄膜的折射率，振荡器参数和光学带隙
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8. CdSiAs sub 2 Thin Films for Solar Cell Applications. Second Quarter Report, 7/9/80-10/8/80 [R] . Burton, L. C. 1981

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Refractive index, oscillator parameters nd optical band gap of e-beam vaporated Ga_(10)Ge_(10)Te_(80) films

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