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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Optimal deposition conditions of TiN barrier layers for the growth of vertically aligned carbon nanotubes onto metallic substrates
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Optimal deposition conditions of TiN barrier layers for the growth of vertically aligned carbon nanotubes onto metallic substrates

机译：TiN阻挡层的最佳沉积条件，用于在金属基板上垂直排列的碳纳米管的生长

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摘要

Plasma enhanced chemical deposition (PECVD) has proven over the years to be the preferred method for the growth of vertically aligned carbon nanotubes and nanofibres (VACNTs and VACNFs, respectively). In particular, carbon nanotubes (CNTs) grown on metallic surfaces present a great potential for high power applications, including low resistance electrical contacts, high power switches, electron guns or supercapacitors. Nevertheless, the deposition of CNTs onto metallic substrates is challenging, due to the intrinsic incompatibility between such substrates and the metallic precursor layers required to promote the growth of CNTs. In particular, the formation of CNT films is assisted by the presence of a nanometric (10-100 nm) monolayer of catalyst clusters, which act as nucleation sites for CNTs. The nanometric character of the precursor layer, together with the high growth temperature involved during the PECVD process (-700 °C), strongly favours the in-diffusion of the catalyst nanoclusters into the bulk of the metallic substrate, which results in a dramatic reduction in the nucleation of CNTs. In order to overcome this problem, it is necessary to coat the metallic substrate with a diffusion barrier layer, prior to the growth of the catalyst precursor. Unlike other conventional ceramic barrier layers, TiN provides high electrical conductivity, thus being a promising candidate for use as barrier material in applications involving low resistance contacts. In this work we investigate the anti-diffusion properties of TiN sputtered coatings and its potential applicability to the growth of CNTs onto copper substrates, using Fe as catalyst material. The barrier and catalyst layers were deposited by magnetron sputtering. Auger electron spectroscopy was used to determine the diffusivity of Fe into TiN. Morphological characterization of the CNTs coatings was performed on scanning and transmission electron microscopes. Raman spectroscopy and x-ray diffraction were employed to establish a correlation between TiN characteristics and deposition parameters.
机译：多年来，等离子体增强化学沉积（PECVD）已被证明是用于垂直排列的碳纳米管和纳米纤维（分别为VACNTs和VACNFs）生长的首选方法。特别是，在金属表面上生长的碳纳米管（CNT）在高功率应用方面具有巨大潜力，包括低电阻电触点，高功率开关，电子枪或超级电容器。然而，由于在这样的基底与促进CNT的生长所需的金属前体层之间固有的不相容性，将CNT沉积在金属基底上是具有挑战性的。特别地，CNT膜的形成通过催化剂簇的纳米（10-100 nm）单层的存在而得以辅助，该催化剂簇充当CNT的成核位点。前体层的纳米特性以及在PECVD工艺中所涉及的高生长温度（-700°C）强烈促进了催化剂纳米团簇向金属基质的整体扩散，从而大大减少了在碳纳米管的成核中。为了克服该问题，必须在催化剂前体的生长之前用扩散阻挡层涂覆金属基材。与其他常规陶瓷阻隔层不同，TiN具有高导电性，因此是在涉及低电阻触点的应用中用作阻隔材料的有希望的候选者。在这项工作中，我们研究了以Fe为催化剂材料的TiN溅射涂层的抗扩散性能及其对CNT在铜基板上生长的潜在适用性。阻挡层和催化剂层通过磁控溅射沉积。用俄歇电子能谱法测定铁在TiN中的扩散率。碳纳米管涂层的形貌表征在扫描和透射电子显微镜上进行。拉曼光谱和X射线衍射被用来建立TiN特性和沉积参数之间的相关性。

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