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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Strain effect in determining the geometric shape of self-assembled quantum dot
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Strain effect in determining the geometric shape of self-assembled quantum dot

机译：确定自组装量子点几何形状的应变效应

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摘要

The geometric shape of a self-assembled quantum dot (QD) formed by the strain-induced Stranski—Krastanov mode has been studied as a function of strain energy by the short-range valence-force-field approach. It has been shown by dynamic bond relaxation through strain energy minimization that for the most commonly used InAs QD in GaAs and InP matrices and Ge QD in Si matrix, a pyramidal shape is energy favoured over an hemispherical shape when the QD is not capped due to the lattice relaxation at the QD surface. When the QD becomes totally embedded in the background material, the elastic strain energy of a hemispherical InAs QD is minimal. The results agree with experimental observations. We further studied the coupling of strain fields of QDs in adjacent QD layers which shows that QDs in multiply stacked QD layers can be aligned along the layer growth direction in order to minimize the strain energy.
机译：通过短价价力场方法研究了由应变诱导的Stranski-Krastanov模式形成的自组装量子点（QD）的几何形状与应变能的关系。通过应变能最小化实现的动态键松弛显示，对于GaAs和InP矩阵中最常用的InAs量子点以及Si矩阵中的Ge QD，当QD未被限制时，金字塔形状的能量优于半球形形状的能量QD表面的晶格弛豫。当QD完全嵌入背景材料中时，半球形InAs QD的弹性应变能最小。结果与实验观察一致。我们进一步研究了相邻QD层中QD的应变场的耦合，结果表明，多层QD层中的QD可以沿层的生长方向排列，以使应变能最小。

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