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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Magnetic and electrical properties of p-type Mn-doped CuCrO2 semiconductors
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Magnetic and electrical properties of p-type Mn-doped CuCrO2 semiconductors

机译：p型Mn掺杂CuCrO2半导体的磁性能和电性能

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摘要

Mn-doped CuCrO2 polycrystalline semiconductors were synthesized by the sol-gel method. The valence state of the Mn ions in the CuCr1-xMnxO2 samples was identified as 3+ by analysing their lattice parameters, their electrical properties and their x-ray photoelectron spectra. The temperature dependence of the susceptibility of all samples exhibits paramagnetic behaviour at high temperature. For x = 0.20 the samples exhibit a clear ferromagnetic ( FM) transition at 120 K. Clear hysteresis loops indicate that FM order exists in the Mn-doped samples at 50 K. All samples behave like semiconductors. The electrical and magnetic properties indicate that the ferromagnetism can be attributed to the double exchange interaction between the Mn3+ and Cr3+ in CuCr1-xMnxO2 semiconductors.
机译：通过溶胶-凝胶法合成了Mn掺杂的CuCrO2多晶半导体。通过分析CuCr1-xMnxO2的晶格参数，电性能和X射线光电子能谱，可确定Mn离子的价态为3+。所有样品的磁化率对温度的依赖性在高温下均表现出顺磁行为。对于x = 0.20，样品在120 K时表现出清晰的铁磁（FM）跃迁。清晰的磁滞回线表明在50 K时Mn掺杂的样品中存在FM级。所有样品的行为都像半导体。电磁特性表明，铁磁性可以归因于CuCr1-xMnxO2半导体中Mn3 +和Cr3 +之间的双重交换相互作用。

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