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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effect of thermal treatment on the band offsets and interfacial properties of HfO_xN_ygate dielectrics
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Effect of thermal treatment on the band offsets and interfacial properties of HfO_xN_ygate dielectrics

机译：热处理对HfO_xN_ygate电介质的带隙和界面性质的影响

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摘要

Band offsets and interfacial properties of Hf0,1ly films grown on Si(1 0 0) throughradio-frequency reactive magnetron sputtering were investigated by x-ray photoelectronspectroscopy. The changes in the conduction band offset, the valence band offset, as well as inthe interfacial properties were obtained as a function of the annealing temperature. Theinterfacial layer is unavoidably formed for the deposited films and the composition of theinterfacial layer is most likely Hf-silicate and SiO, . With the increase in the annealingtemperature, it is confirmed that the reaction between SiO. and HfOx films formed moreHf-silicate interfacial layer. The valence band offset ( E5) shifts upwards gradually with theincrease in annealing temperature due to the decrease in N elements. After thermal treatment,the obtained conduction band offset (A Ec) increased from 1.20 eV at 500 °C to1.25 eV at 800 °C.
机译：利用X射线光电子能谱研究了通过射频反应磁控溅射在Si（1 0 0）上生长的Hf0,1 ly薄膜的能带偏移和界面性质。获得了导带偏移，价带偏移以及界面性质随退火温度变化的变化。对于沉积的膜不可避免地形成界面层，并且界面层的组成最可能是Hf-硅酸盐和SiO2。随着退火温度的升高，证实了SiO之间的反应。 HfOx薄膜形成更多的Hf-硅酸盐界面层。由于N元素的减少，价带偏移（E5）随着退火温度的升高而逐渐向上移动。热处理后，获得的导带偏移（A Ec）从500°C时的1.20 eV增加到800°C时的1.25 eV。

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