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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices
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Atomic layer etching of ultra-thin HfO2 film for gate oxide in MOSFET devices

机译：MOSFET器件中用于栅极氧化物的HfO2超薄薄膜的原子层蚀刻

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摘要

Precise etch depth control of ultra-thin HfO2 (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl3 gas. A monolayer etching condition of 1.2 angstrom/cycle with a low surface roughness and an unchanged surface composition was observed for ultra-thin, ALET-etched HfO2 by supplying BCl3 gas and an Ar beam at higher levels than the critical pressure and dose, respectively. When HfO2-nMOSFET devices were fabricated by ALET, a 70% increase in the drain current and a lower leakage current were observed compared with the device fabricated by conventional reactive ion etching, which was attributed to the decreased structural and electrical damage.
机译：通过使用高能Ar束和BCl3气体的原子层蚀刻（ALET），研究了用作栅极氧化物材料的HfO2超薄（3.5 nm）薄膜的精确蚀刻深度控制。通过分别以高于临界压力和剂量的水平供应BCl3气体和Ar射线，观察到超薄，ALET蚀刻的HfO2的单层蚀刻条件为1.2埃/循环，具有低表面粗糙度和不变的表面成分。当通过ALET制造HfO2-nMOSFET器件时，与通过常规反应离子刻蚀制造的器件相比，观察到漏极电流增加了70％，泄漏电流更低，这归因于结构和电损伤的减少。

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