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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields
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Laser-dressing effects on the electron g factor in low-dimensional semiconductor systems under applied magnetic fields

机译：在施加磁场的情况下激光整饰对低维半导体系统中电子g因子的影响

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摘要

The effects of a laser field on the conduction-electron effective Landé g factor in GaAs—Ga_(1-x) Al_x As quantum wells and quantum-well wires under applied magnetic fields are studied within the effective-mass approximation. The interaction between the laser field and the semiconductor heterostructure is taken into account via a renormalization of the semiconductor energy gap and conduction-electron effective mass. Calculations are performed for the conduction-electron Landé factor and g-factor anisotropy by considering the non-parabolicity and anisotropy of the conduction band. Theoretical results are obtained as functions of the laser intensity, detuning and geometrical parameters of the low-dimensional semiconductor heterostructures, and indicate the possibility of manipulating and tuning the conduction-electron g factor in heterostructures by changing the detuning and laser-field intensity.
机译：在有效质量近似下，研究了激光场对GaAs-Ga_（1-x）Al_x As量子阱和量子阱线在导电磁场下的导电电子有效Landég因子的影响。通过半导体能隙和导电电子有效质量的重新归一化，可以考虑到激光场和半导体异质结构之间的相互作用。通过考虑导带的非抛物线性和各向异性，对传导电子Landé因子和g因子各向异性进行计算。获得的理论结果是激光强度，低维半导体异质结构的失谐和几何参数的函数，并且表明了通过改变失谐和激光场强度来操纵和调整异质结构中的导电电子因子的可能性。

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