A light-emitting field-effect transistor based on a polyfluorene-ZnO nanoparticles film

Aleshin A.N.; Shcherbakov I.P.

首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >A light-emitting field-effect transistor based on a polyfluorene-ZnO nanoparticles film

【24h】

A light-emitting field-effect transistor based on a polyfluorene-ZnO nanoparticles film

机译：基于聚芴-ZnO纳米颗粒薄膜的发光场效应晶体管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on a light-emitting organic field-effect transistor (LE-OFET) based on a polyfluorene (PFO)-ZnO nanoparticles film. We have analysed the behaviour of absorption, photoluminescence spectra and electroluminescence (EL) intensity of the PFO: ZnO hybrid films with different ZnO concentrations prepared in the FET configuration. We have found that the PFO: ZnO LE-OFET exhibits the current-voltage characteristics of a unipolar FET with saturation behaviour and operates in the hole accumulation mode. The FET mobility values in the PFO: ZnO films with a high ZnO concentration are close to the mobility of polycrystalline ZnO. A significant increase in the EL intensity of the hybrid films has been observed with an increase in the concentration of ZnO nanoparticles and with the application of gate voltages. The working mechanism of the LE-OFET device is discussed.

机译：我们报告了一种基于聚芴（PFO）-ZnO纳米颗粒薄膜的发光有机场效应晶体管（LE-OFET）。我们已经分析了在FET配置中制备的具有不同ZnO浓度的PFO：ZnO杂化膜的吸收，光致发光光谱和电致发光（EL）强度的行为。我们发现，PFO：ZnO LE-OFET表现出具有饱和行为的单极性FET的电流-电压特性，并以空穴累积模式工作。具有高ZnO浓度的PFO：ZnO膜中的FET迁移率值接近多晶ZnO的迁移率。随着ZnO纳米颗粒浓度的增加和栅极电压的施加，已经观察到杂化膜的EL强度显着增加。讨论了LE-OFET器件的工作机理。

著录项

来源
《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2010年第31期|共5页
作者
Aleshin A.N.; Shcherbakov I.P.;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词

相似文献

外文文献
中文文献
专利

1. A light-emitting field-effect transistor based on a polyfluorene-ZnO nanoparticles film [J] . Aleshin A.N., Shcherbakov I.P. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2010,第31期

机译：基于聚芴-ZnO纳米颗粒薄膜的发光场效应晶体管
2. Electrical and optical properties of light-emitting field-effect transistors based on MEH-PPV polymer composite films with ZnO nanoparticles [J] . Aleshin A.N., Shcherbakov I.P., Fedichkin F.S., Physics of the solid state . 2012,第12期

机译：基于具有ZnO纳米粒子的MEH-PPV聚合物复合膜的发光场效应晶体管的电学和光学特性
3. Light-Emitting Field-Effect Transistors Based on Composite Films of Polyfluorene and CsPbBr3 Nanocrystals [J] . Aleshin A. N., Shcherbakov I. P., Kirilenko D. A., Physics of the solid state . 2019,第2期

机译：基于多氟硼和CSPBBR3纳米晶体复合薄膜的发光场效应晶体管
4. Ambipolar light-emitting field-effect transistors based on molecular thin films [C] . R. Capelli, F. Dinelli, M. A. Loi, Organic Light Emitting Materials and Devices X; Proceedings of SPIE-The International Society for Optical Engineering; vol.6333 . 2006

机译：基于分子薄膜的双极发光场效应晶体管
5. Organic blue light-emitting diodes and field-effect transistors based on monodisperse conjugated oligomers. [D] . Culligan, Sean W. 2006

机译：基于单分散共轭低聚物的有机蓝色发光二极管和场效应晶体管。
6. Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers [O] . Gizem Acar, Muhammad Javaid Iqbal, Mujeeb Ullah Chaudhry 2021

机译：通过结合电荷注入层间P型聚合物的发光场效应晶体管大面积发射
7. Field-Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors (Adv. Mater. 10/2014) [O] . Lifeng Wang, Bin Wu, Jisi Chen, 2014

机译：场效应晶体管：单层六边形氮化硼膜，具有大畴尺寸和清洁界面，用于增强基于石墨烯的场效应晶体管的迁移率（ADV。Mater。10/2014）
8. Characterizing the Sensitivity, Selectivity, and Reversibility of the Metal-DopedPhthalocyanine Thin-Films Used with the Interdigitated Gate Electrode Field-Effect Transistor (IGEFET) to Detect Organophosphorous Compounds and Nitrogen Dioxide [R] . Howe, C. P. 1991

机译：表征金属掺杂酞菁薄膜的灵敏度，选择性和可逆性，与交叉栅极电极场效应晶体管（IGEFET）一起检测有机磷化合物和二氧化氮

A light-emitting field-effect transistor based on a polyfluorene-ZnO nanoparticles film

摘要

著录项

相似文献

相关主题

期刊订阅