• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers
【24h】

Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers

机译：使用InGaAsSb夹层的中红外InAsSb / InP纳米结构的发射波长扩展

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper presents a study on the emission wavelength extension of InAsSb nanostructures using InGaAsSb sandwich layers. Due to the reduced lattice mismatch between InAsSb nanostructure layer and buffer/capping layer, the introduction of InGaAsSb sandwich layers leads to larger island size, reduced compressive strain and lower confinement barrier for InAsSb nanostructures, thus resulting in a longer emission wavelength. For InGaAsSb sandwich layers with nominal Sb concentration higher than 10%, type II band alignment is observed for theInAsSb/InGaAsSb heterostructure, which also contributes to the extension of emission wavelength. The InGaAsSb sandwich layers provide an effective approach to extend the emission wavelength of InAsSb nanostructures well beyond 2μ which is very useful for device applications in the mid-infrared region.
机译：本文介绍了使用InGaAsSb夹层的InAsSb纳米结构的发射波长扩展的研究。由于减少了InAsSb纳米结构层和缓冲/盖层之间的晶格失配，InGaAsSb夹层的引入导致InAsSb纳米结构的岛尺寸增大，压缩应变降低和限制势垒降低，从而导致发射波长更长。对于标称Sb浓度高于10％的InGaAsSb夹层，InAsSb / InGaAsSb异质结构观察到II型能带排列，这也有助于延长发射波长。 InGaAsSb夹层提供了一种有效的方法来将InAsSb纳米结构的发射波长扩展到远超过2μ，这对于中红外区域的器件应用非常有用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号