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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >GAS-SENSING PROPERTIES OF SPUTTERED THIN FILMS OF TUNGSTEN OXIDE
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GAS-SENSING PROPERTIES OF SPUTTERED THIN FILMS OF TUNGSTEN OXIDE

机译:溅射氧化钨薄膜的气敏特性

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Electrical, structural and morphological properties of thin films of WO3 deposited by the reactive RF sputtering method have been analysed. The fundamental electrical features of WO3 have been determined by Hall-effect measurements. Information about the structure and morphology of these films was obtained by transmission electron microscopy techniques. The investigations of electrical properties in a controlled atmosphere at various operating temperatures revealed that WO3 is particularly suitable for NO gas detection. In particular, the relative variation of the resistance of WO3 was found to be reversible and to follow a power-law relationship. The dependence of the electrical properties on the structure and morphology has also been discussed. [References: 20]
机译:已经分析了通过反应性射频溅射方法沉积的WO3薄膜的电学,结构和形态学性质。 WO3的基本电气特性已通过霍尔效应测量确定。通过透射电子显微镜技术获得有关这些膜的结构和形态的信息。在各种操作温度下在受控气氛中进行的电性能研究表明,WO3特别适用于NO气体检测。特别地,发现WO3的电阻的相对变化是可逆的并且遵循幂律关系。还讨论了电性能对结构和形态的依赖性。 [参考:20]

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