Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

Pankratov EL

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Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

机译：用于生产植入结整流器的辐射缺陷的激光退火的优化

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In this paper we optimized pulse laser annealing for increasing the recently described effect (see, for example, Pankratov and Spagnolo 2005 Eur. Phys. J. B 46 15, Pankratov 2005 Phys. Rev. B 72 075201, Pankratov 2008 Phys. Lett. A 372 1897) of increasing at one time the sharpness of the p-n junction and the homogeneity of the impurity distribution in a doped area. Some conditions on the correlation between the inhomogeneities of the multilayer structure and the temperature distribution, which was formed by laser pulses, have been considered.

机译：在本文中，我们优化了脉冲激光退火以提高最近描述的效果（例如，参见Pankratov和Spagnolo 2005 Eur.Phys.J.B 46 15，Pankratov 2005 Phys.Rev.B 72 075201，Pankratov 2008 Phys.Lett。 A 372 1897）一次增加了pn结的清晰度和掺杂区中杂质分布的均匀性。已经考虑了关于多层结构的不均匀性与由激光脉冲形成的温度分布之间的相关性的一些条件。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2008年第11期|共6页
作者
Pankratov EL;
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正文语种 eng
中图分类应用物理学;
关键词
P-N-JUNCTION; SILICON; DOPANT; REDISTRIBUTION; DIFFUSION;

机译：P-N结;硅;掺杂剂;减阻;扩散;

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1. Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier [J] . Pankratov EL Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第11期

机译：用于生产植入结整流器的辐射缺陷的激光退火的优化
2. REDISTRIBUTION OF A DOPANT DURING ANNEALING OF RADIATION DEFECTS IN A MULTILAYER STRUCTURE BY LASER SCANS FOR PRODUCTION OF AN IMPLANTED-JUNCTION RECTIFIER [J] . E. L. PANKRATOV International journal of nanoscience . 2008,第4a5期

机译：用多层激光对多层结构中的辐射缺陷退火过程中的掺杂物再分布，以生产注入式整流器
3. Redistribution of dopant in a multilayer structure during annealing of radiation defects by laser pulses for production an implanted-junction rectifier [J] . Pankratov EL Physics Letters, A . 2008,第24期

机译：在通过激光脉冲对辐射缺陷进行退火的过程中，掺杂剂在多层结构中的重新分布，用于生产植入结整流器
4. Electronic excitation effects on defect production and radiation annealing in Fe irradiated at approx 80 K with energetic particles [C] . Y.Chimi, A.Iwase, N.Ishikawa, Symposium on atomistic mechanisms in beam synthesis and irradiation of materials . 1998

机译：电子励磁对缺陷生产和辐射退火的电子励磁效应，用大约80 k照射有能量粒子的Fe
5. The effect of electric fields on the formation and annealing of stable radiation induced defects in indium phosphide semiconductor junctions. [D] . Panunto, Michael John. 1996

机译：电场对磷化铟半导体结中稳定的辐射诱导缺陷的形成和退火的影响。
6. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing [O] . Emi Machida, Masahiro Horita, Yasuaki Ishikawa, -1

机译：通过水下激光退火结晶成多晶硅薄膜并同时灭活电缺陷
7. Optimization of Pulse Laser Annealing to Increase Sharpness of Implanted-junction Rectifier in Semiconductor Heterostructure [O] . E. L. Pankratov 2014

机译：优化脉冲激光退火以提高半导体异质结构中注入结整流器的清晰度

Optimization of laser annealing of radiation defects for production of an implanted-junction rectifier

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