...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of Nickel layer thickness on the magnetic properties and contact resistance of AuGe/Ni/Au Ohmic contacts to GaAs/AJGaAs heterostructures
【24h】

Influence of Nickel layer thickness on the magnetic properties and contact resistance of AuGe/Ni/Au Ohmic contacts to GaAs/AJGaAs heterostructures

机译：镍层厚度对AuGe / Ni / Au欧姆接触GaAs / AJGaAs异质结构的磁性能和接触电阻的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The magnetization of alloyed Ohmic contact film structures of the form AuGe/Ni/Au deposited on a GaAs/AIGaAs heterostructure substrate are reported as functions of Ni-layer thickness and alloying temperature. The observations are correlated with contact resistance and surface morphology studies. It is found that drops in magnetization, due to conversion of Ni to a non-magnetic phase or alloy, begin at anneal temperatures as low as 100 °C for all Ni-layer thicknesses. The conversion is completed at an anneal temperature, TA, that increases with Ni-layer thickness. TA varies from 100-200 °C to 400-430 °C as Ni-layer thickness is varied from 10 to 100 nm for an AuGe (88 : 12 wt%) layer thickness of 100 nm. The electrical contact formation, however, appears to begin at much higher temperatures than 100 C. Lowest contact resistance (0.05 ± 0.01 Q mm) is obtained when Ni thickness is about 25 nm for 100 nm AuGe layer thickness, anneal temperature is 400 T and anneal duration is 60 s. This contact is non-magnetic. Measurements on samples with other AuGe layer thicknesses suggest that the contact resistances are comparable to this optimum value, if the ratio of AuGe layer thickness to that of Ni is 4. Increasing the Ni-layer thickness reduces the roughness of annealed contacts, but also increases contact resistance. The magnetic measurements are suggestive of a transformed Ni-layer thickness proportional to the thickness of the underlying AuGe layer. It is proposed that Ni diffuses into AuGe in a concentration limited diffusive mechanism followed by segregation into Ni3Ge.
机译：据报道，沉积在GaAs / AIGaAs异质结构衬底上的AuGe / Ni / Au形式的合金欧姆接触膜结构的磁化强度是Ni层厚度和合金化温度的函数。这些观察结果与接触电阻和表面形态研究相关。发现对于所有镍层厚度，由于镍转化为非磁性相或合金而导致的磁化强度下降始于低至100°C的退火温度。转化在退火温度TA处完成，退火温度TA随Ni层厚度的增加而增加。对于100 nm的AuGe（88:12 wt％）层，Ni层厚度从10 nm变为100 nm时，TA从100-200°C到400-430°C不等。但是，电接触的形成似乎始于比100 C高得多的温度。当Ni厚度为100 nm AuGe层时，Ni厚度约为25 nm，退火温度为400 T，并且当Ni厚度为25 nm时，可获得最低的接触电阻（0.05±0.01 Q mm）。退火时间为60秒。该接触是非磁性的。对具有其他AuGe层厚度的样品进行的测量表明，如果AuGe层厚度与Ni的比率为4，则接触电阻可与该最佳值相媲美。增加Ni层厚度可减少退火触点的粗糙度，但也会增加接触电阻。磁性测量表明与下面的AuGe层的厚度成比例的Ni层的转变厚度。提出Ni以浓度受限的扩散机制扩散到AuGe中，然后偏析到Ni3Ge中。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号