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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures
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Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures

机译：低温下蓝宝石衬底上外延ZnO薄膜两步生长的结构表征

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摘要

We have investigated two-step growth of high-quality epitaxial ZnO films, where the first layer-the buffer layer (nucleation layer template)—is grown at a low temperature (230-290 °C) to induce a smooth (two-dimensional) growth. This is followed by growth at a moderate temperature -430 °C to form high-quality smooth ZnO layers for device structures. It was possible to reduce the growth temperature to 250-290 °C and obtain a smooth epitaxial template layer on sapphire (0 0 0 I) substrates with surface roughness less than 1 nm. After the high-temperature growth, the film surface undulations (roughness) increased to about 2 nm, but it is still quite smooth. The calculation of c and a lattice parameters by high-resolution x-ray diffraction shows that the a lattice parameter is fully relaxed at the growth temperatures but the c lattice parameter is dependent on the defect concentration in the growing film. A decoupling between a and c lattice parameters of the films is observed, which leads to abnormal Poisson's ratios ranging from 0.08 to 0.54. The decoupling of the lattice parameters is analysed based on growth characteristics and the presence of strain and defects in the grown films. We present our detailed studies on the nature of epitaxy, defects and interfaces by using comprehensive x-ray diffraction and high-resolution TEM studies.
机译：我们研究了高质量外延ZnO薄膜的两步生长，其中第一层-缓冲层（成核层模板）在低温（230-290°C）下生长，以产生平滑的（二维） ）增长。随后在-430°C的中等温度下生长以形成用于器件结构的高质量光滑ZnO层。可以将生长温度降低到250-290°C，并在表面粗糙度小于1 nm的蓝宝石（0 0 0 I）衬底上获得光滑的外延模板层。高温生长后，膜表面起伏（粗糙度）增加到约2 nm，但仍相当光滑。通过高分辨率X射线衍射对c和晶格参数的计算表明，在生长温度下，晶格参数是完全松弛的，但是c晶格参数取决于生长膜中的缺陷浓度。观察到薄膜的a和c晶格参数之间的解耦，这导致异常的泊松比在0.08至0.54的范围内。基于生长特性以及生长膜中应变和缺陷的存在，分析了晶格参数的解耦。通过使用全面的X射线衍射和高分辨率TEM研究，我们对外延，缺陷和界面的性质进行了详细的研究。

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