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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Implantation-induced damage in Ge:strain and disorder profiles during defect accumulation and recovery
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Implantation-induced damage in Ge:strain and disorder profiles during defect accumulation and recovery

机译：缺陷累积和恢复过程中Ge：应变和无序分布的植入诱导损伤

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We present an experimental study of structural lattice damage in Ge induced by ion implantation. From the strain and disorder profiles, calculated from x-ray diffraction and ion channelling experiments we have investigated the defect accumulation as a function of ion fluence, mass, energy and current density as well as the damage recovery and recrystallization of the implanted region upon annealing. The damage accumulation process can be divided into three different regimes, based on the ion fluence. In the lowest fluence regime, the strain and the defect fraction are linearly proportional to the ion fluence, and the number of defects in the implanted layer is directly related to the deposited energy that is converted into the creation of vacancies. In the second regime, the damage accumulation process is more efficient, due to the increased defect density in the implanted layer. The third fluence regime starts at the critical fluence for amorphization, and this value has been determined for a wide range of ion masses and energies. The recovery study of the implantation-induced damage has revealed two distinct annealing steps. Rapid thermal annealing at temperatures as low as 100 ℃ results in the removal of isolated defects, which are present in the low-fluence implanted samples, as well as in the tail of the implantation profile of heavily damaged samples. Annealing at 350 ℃ results in the recrystallization of amorphous Ge at the amorphous-crystalline interface at a rate of 14 ± 3 nmgtin 1. Although Ge amorphizes at much lower fluences than Si, the influence of the studied implantation parameters on the damage accumulation process is comparable for both group IV semiconductors. This extended experimental overview of implantation-induced structural damage partly fills the large knowledge gap on implantation-related issues in Ge, and provides relevant and complementary information for defect studies in Ge and, in general, for any study using implanted Ge.
机译：我们提出了由离子注入引起的锗中结构晶格损伤的实验研究。根据通过X射线衍射和离子通道实验计算得出的应变和无序分布图，我们研究了缺陷累积与离子通量，质量，能量和电流密度的关系，以及退火后注入区域的损伤恢复和重结晶。基于离子通量，损伤累积过程可分为三种不同的状态。在最低注量状态下，应变和缺陷分数与离子注量成线性比例，注入层中的缺陷数量与沉积能量直接相关，沉积能量转化为空位。在第二种方案中，由于植入层中缺陷密度的增加，损伤累积过程更加有效。第三注量范围从非晶化的临界注量开始，并且该值已针对各种离子质量和能量确定。植入引起的损伤的恢复研究显示了两个不同的退火步骤。在低至100℃的温度下进行快速热退火可以消除孤立的缺陷，这些缺陷存在于低通量的注入样品中以及严重损坏的样品的注入轮廓的尾部。在350℃退火导致非晶态Ge在非晶-晶体界面以14±3 nmgtin 1的速率重结晶。尽管Ge的非晶化通量远低于Si，但研究的注入参数对损伤累积过程的影响是这两种IV类半导体具有可比性。对植入物引起的结构损伤的扩展实验概述部分填补了Ge中与植入有关的问题的大量知识空白，并为Ge中的缺陷研究以及通常使用植入Ge的任何研究提供了相关和补充的信息。

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