Theoretical design and performance of InxGa1-xN two-junction solar cells

Zhang XB; Wang XL; Xiao HL; Yang CB; Ran JX; Wang CM; Hou QF; Li JM; Wang ZG

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Theoretical design and performance of InxGa1-xN two-junction solar cells

机译：InxGa1-xN两结太阳能电池的理论设计与性能

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The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

机译：InxGa1-xN两结太阳能电池的效率是通过在AM1.5全局，AM1.5直接和AM0光谱下子电池的各种带隙组合计算得出的。研究了顶部电池厚度对效率的影响，并评估了InxGa1-xN电池在各种光谱的最大光浓度下的性能。在单光照射下，AM1.5全球光谱的最佳效率为35.1％，顶部/底部电池的带隙组合为1.74 eV / 1.15 eV。对于AM1.5全球光谱中的最高光浓度，极限效率为40.9％，顶部/底部细胞带隙为1.72 eV / 1.12 eV。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2008年第24期|共6页
作者
Zhang XB; Wang XL; Xiao HL; Yang CB; Ran JX; Wang CM; Hou QF; Li JM; Wang ZG;
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正文语种 eng
中图分类应用物理学;
关键词
IN1-XGAXN ALLOYS; BAND-GAP; IRRADIANCE; SINGLE; INN;

机译：IN1-XGAXN合金;带隙;辐照度;单;INN;

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1. Theoretical design and performance of InxGa1-xN two-junction solar cells [J] . Zhang XB, Wang XL, Xiao HL, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2008,第24期

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Theoretical design and performance of InxGa1-xN two-junction solar cells

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