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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effect of hot carrier stress on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain
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Effect of hot carrier stress on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain

机译：热载流应力对具有和不具有SiGe源/漏的40 nm PMOSFET射频可靠性的影响

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摘要

For the first time, the effect of hot carrier stress (HCS) on RF reliability of 40 nm PMOSFETs with and without SiGe source/drain (S/D) was studied in detail. After HCS, the extra SiGe S/D mechanical stress deteriorated the hot carrier reliability more by inducing more defects at the interface between the gate oxide and the extension of S/D. However, the SiGe S/D strain did not change the worst HCS condition and the dependence of f(T) degradation. The f(T) is still dominated by g(m) only, even though the C-gs and C-gd have been changed by the SiGe S/D strain.
机译：首次详细研究了热载流子应力（HCS）对具有和不具有SiGe源/漏（S / D）的40 nm PMOSFET的RF可靠性的影响。在HCS之后，额外的SiGe S / D机械应力通过在栅极氧化物和S / D扩展之间的界面处引起更多的缺陷，进一步降低了热载流子的可靠性。但是，SiGe S / D应变并没有改变最坏的HCS条件和f（T）降解的依赖性。即使C-gs和C-gd因SiGe S / D应变而改变，f（T）仍仅由g（m）决定。

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