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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Synthesis and thermoelectric properties of n-type Sr8Ga16-xGe30-y clathrates with different Ga/Ge ratios
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Synthesis and thermoelectric properties of n-type Sr8Ga16-xGe30-y clathrates with different Ga/Ge ratios

机译：Ga / Ge比不同的n型Sr8Ga16-xGe30-y笼形物的合成及热电性能

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摘要

Pure phase polycrystalline clathrates Sr8Ga16-x Ge30-y with Ga/Ge ratios ranging from 0.481 to 0.517 have been prepared by the melting method. The obtained samples exhibit n-type conduction behaviour with carrier concentrations varying from 0.33 x 10(20) to 2.81 x 10(20) cm(-3) as the Ga/Ge ratio changes from 0.517 to 0.481 at room temperature. The relationship between the thermoelectric properties and the Ga/Ge ratio is explored. The electrical conductivities increase and the absolute Seebeck coefficients decrease with a decrease in the Ga/Ge ratio. The power factors increase with a decrease in the Ga/Ge ratios. The thermal conductivities are maintained at the same order, lower than 1Wm(-1) K-1 at room temperature. As a result, a maximum ZT value of 0.85 is obtained at 650K for the lowest Ga/Ge ratio sample of Sr16.86Ga27.01Ge56.13.
机译：通过熔融法制备了Ga / Ge比为0.481至0.517的纯相多晶包合物Sr8Ga16-x Ge30-y。当室温下Ga / Ge比从0.517变为0.481时，获得的样品表现出n型导电行为，载流子浓度从0.33 x 10（20）到2.81 x 10（20）cm（-3）。探索了热电性质和Ga / Ge比之间的关系。随着Ga / Ge比的减小，电导率增加，并且绝对塞贝克系数减小。功率因数随Ga / Ge比的降低而增加。在室温下，热导率保持相同的顺序，低于1Wm（-1）K-1。结果，对于最低的Ga / Ge比样品Sr16.86Ga27.01Ge56.13，在650K下获得的最大ZT值为0.85。

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