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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties
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The influence of structural defects in ZnSe/GaAs heterostructures on luminescence properties

机译：ZnSe / GaAs异质结构中结构缺陷对发光性能的影响

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摘要

Cathodoluminescence (CL) measurements were carried out on ZnSe/GaAs heterostructures grown by metal-organic vapour-phase epitaxy, partly with different pre-growth treatments. The influence of structural defects on the luminescence properties of ZnSe epilayers both above and below the experimentally obtained value of the critical thickness for strain relaxation were studied. The CL results combined with scanning transmission electron microscopy demonstrate that there is a correlation between structural defects and the deep-level emission at around 580 nm named the SA emission. In addition, a strong influence of the pre-growth treatment on the crystalline quality of epilayers of ZnSe was observed. [References: 26]
机译：对通过金属有机蒸气相外延生长的ZnSe / GaAs异质结构进行阴极发光（CL）测量，部分采用不同的预生长处理。研究了结构缺陷对ZnSe外延层在实验获得的应变松弛临界厚度以上和以下的发光特性的影响。 CL结果与扫描透射电子显微镜相结合表明，结构缺陷与580nm左右的深层发射（称为SA发射）之间存在相关性。另外，观察到预生长处理对ZnSe外延层的晶体质量有强烈影响。 [参考：26]

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