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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Photosensitization of InSb crystals by pulsed laser irradiation
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Photosensitization of InSb crystals by pulsed laser irradiation

机译：脉冲激光辐照InSb晶体的光敏性

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摘要

The photosensitization of n-InSb single crystals after irradiation with nanosecond ruby laser pulses was studied. Based on a study of the photoconductivity spectra it is established that the surface recombination rate decreases in the samples subjected to subthreshold irradiation. The steady-state photoconductivity, non-equilibrium carrier lifetime and resistivity increases. Changes in the photo-electric properties of InSb crystals are attributed to the cleaning of the surface and to the gettering of electrically active point defects by extended growth defects. The role of laser-induced stress and shock waves in these processes is discussed. The method for changing the surface state and modifying the photo-electric parameters of InSb crystals and for improving the stability of their properties by means of pulsed laser irradiation is advanced.
机译：研究了纳秒级红宝石激光脉冲辐照后n-InSb单晶的光敏性。基于对光导光谱的研究，可以确定在亚阈值辐照下样品的表面复合率降低了。稳态光电导率，非平衡载流子寿命和电阻率增加。 InSb晶体的光电特性的变化归因于表面的清洁和扩展的生长缺陷对电活性点缺陷的吸收。讨论了激光诱导的应力和冲击波在这些过程中的作用。提出了改变表面状态和改变InSb晶体的光电参数以及通过脉冲激光辐照提高其性能稳定性的方法。

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