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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Channel switching and magnetoresistance of a metal-SiO2-Si structure
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Channel switching and magnetoresistance of a metal-SiO2-Si structure

机译：金属-SiO2-Si结构的通道切换和磁阻

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摘要

We report a switching of conducting channel and magnetoresistance (MR) in very thin metallic films deposited on Si substrate with native SiO2, surface. The resistance of the metal-oxide-semiconductor (MOS) structure significantly increases when the temperature is lowered to a threshold value T-c of about 250 K. At room temperature the samples exhibit a high conductivity, and a positive MR of about 18%. Below T-c, the resistivity is increased by similar to 50% and the positive MR disappears. This effect can be explained by the conducting channel switching from the Si electron inversion layer to the upper metallic films when the temperature is decreased. It has also been found that the MR of Cu80Co20-SiO2-Si structure changes sign with the change of temperature, which is correlated to the switching of the conducting channel. [References: 10]
机译：我们报告了在具有天然SiO2表面的Si衬底上沉积的非常薄的金属膜中的导电沟道和磁阻（MR）的转换。当温度降低到约250 K的阈值T-c时，金属氧化物半导体（MOS）结构的电阻显着增加。在室温下，样品表现出高电导率，正MR约为18％。低于T-c，电阻率增加约50％，并且正MR消失。可以通过降低温度时从Si电子反转层到上层金属膜的导电沟道切换来解释这种效果。还发现Cu80Co20-SiO2-Si结构的MR随温度的变化而改变符号，这与导电通道的切换有关。 [参考：10]

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