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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >TEMPERATURE-INDUCED CHARGE TRANSFER AT A POLYMER-SEMICONDUCTOR INTERFACE - STRONG-INVERSION EFFECTS
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TEMPERATURE-INDUCED CHARGE TRANSFER AT A POLYMER-SEMICONDUCTOR INTERFACE - STRONG-INVERSION EFFECTS

机译:聚合物-半导体激光器界面的温度诱导电荷转移-强反演效应

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摘要

A copolymer of vinylidene fluoride and trifluoroethylene is solution cast onto a p-type silicon wafer to produce an enhancement field-effect transistor structure. Inversion is induced at the silicon surface when the aluminized polymer gate is suitably biased. The thermal response of the structure is investigated for a pressure-step-induced temperature pulse causing a corresponding pulse in the drain-to-source current. Under-strong inversion conditions, excellent agreement between theory and results is obtained if two given species of trap are used: one with the surface density and ionization energy fixed, and the other with both these parameters variable. [References: 10]
机译:将偏二氟乙烯和三氟乙烯的共聚物溶液浇铸到p型硅片上,以产生增强的场效应晶体管结构。当铝化聚合物栅极适当偏置时,会在硅表面产生反转。对于压力阶跃引起的温度脉冲(在漏极至源极电流中产生相应的脉冲),研究了结构的热响应。在强反演条件下,如果使用两种给定的阱类型,则理论和结果之间将获得极好的一致性:一种阱的表面密度和电离能固定,而另一种变量的参数均可变。 [参考:10]

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