Dielectric suppression and its effect on photoabsorption of nanometric semiconductors

Sun CQ.; Tay BK.; Lau SP.; Huang HT.; Li S.; Sun XW.

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Dielectric suppression and its effect on photoabsorption of nanometric semiconductors

机译：介电抑制及其对纳米半导体光吸收的影响

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Deeper insight is presented into the origin of the dielectric suppression and its effect on the photoabsorption of nanometric semiconductors. Consistency between modelling predictions and experimental observations reveals that the dielectric suppression originates from the enhancement of the crystal field due to surface bond contraction and the rise of the surface-to-volume ratio with decreasing particle size. The suppression of the dielectric function will lead to a blue shift in photoabsorption edges, which may find application in microelectronic and photonic devices of nanometre scales. [References: 30]

机译：提出了对介电抑制的起源及其对纳米半导体光吸收的影响的更深刻见解。建模预测与实验观察之间的一致性表明，介电抑制源自表面键收缩引起的晶体场增强以及随着粒径减小而表面积与体积之比的升高。介电功能的抑制将导致光吸收边缘发生蓝移，这可能会在纳米级的微电子和光子器件中得到应用。 [参考：30]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2001年第15期|共4页
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Sun CQ.; Tay BK.; Lau SP.; Huang HT.; Li S.; Sun XW.;
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1. Dielectric suppression and its effect on photoabsorption of nanometric semiconductors [J] . Sun CQ., Tay BK., Lau SP., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2001,第15期

机译：介电抑制及其对纳米半导体光吸收的影响
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机译：使用超薄介电阻挡层抑制暗电流的横向非晶态硒金属绝缘体，半导体，绝缘体，金属光电探测器
3. Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AIGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors [J] . Joseph J. Freedsman, Toshiharu Kubo, S. Lawrence Selvaraj, Japanese journal of applied physics . 2011,第4ISSUE2期

机译：以AlGaN / GaN金属氧化物半导体高电子迁移率晶体管的热氧化Al层为栅极电介质来抑制栅极泄漏并提高击穿电压
4. Dielectric suppression, blue-shift in photo luminescence and absorption of nanometric semiconductors [C] . Sun, C.O., Sun, . 2001

机译：介电抑制，光致发光中的蓝移和纳米半导体的吸收
5. High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hafnium-based high-K gate dielectrics and interface engineering for hafnium oxide/germanium CMOS device [D] . Lu, Nan 2006

机译：适用于未来规模化技术的高介电常数电介质和高迁移率半导体：氧化ha /锗CMOS器件的Ha基高K栅极电介质和界面工程
6. Model dielectric function for 2D semiconductors including substrate screening [O] . Mads L. Trolle, Thomas G. Pedersen, Valerie Véniard -1

机译：包括衬底筛选在内的2D半导体的介电函数模型
7. Diamond turning of soft semiconductors to obtain nanometric mirror surfaces [O] . Fang Fengzhou Z., Venkatesh VasishtC., Zhang G.X. 2002

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8. Semiconductor Measurement Technology:Suppression of Premature Dielectric Breakdown for High-Voltage Capacitance Measurements. [R] . goodman,alvin m. 1977

机译：半导体测量技术：抑制高压电容测量的过早介电击穿。

Dielectric suppression and its effect on photoabsorption of nanometric semiconductors

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