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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Deviation of the AlGaAs lattice constant from Vegard's law
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Deviation of the AlGaAs lattice constant from Vegard's law

机译：AlGaAs晶格常数与Vegard定律的偏差

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A structure consisting of a multiple quantum well, 10 x [GaAs/AlxGa1-xAs], followed by two single layers, A1As and AlxGa1-xAs, grown on a GaAs substrate by molecular beam epitaxy is studied by x-ray diffraction. Poisson's ratio of AlAs is deduced from the x-ray diffraction data based on two assumptions for the relationship between the AlGaAs lattice constant and its composition. For the first, Vegard's law is assumed and Poisson's ratio is found to be 0.255 +/- 0.004, which is much lower than expected (>0.31 for III-V semiconductor materials). However, higher values of 0.322 +/- 0.004 and 0.328 +/- 0.004 are obtained when assuming nonlinear relationships proposed in two previous studies. These high values are in excellent agreement with those obtained by independent measurements. Our results show the deviation from Vegard's law in describing the relationship between the lattice constant of AlGaAs and its composition. [References: 26]
机译：通过x射线衍射研究了由多量子阱10 x [GaAs / AlxGa1-xAs]，然后是通过分子束外延在GaAs衬底上生长的两个单层AlAs和AlxGa1-xAs组成的结构。基于两个关于AlGaAs晶格常数与其组成之间关系的假设，从X射线衍射数据推导出AlAs的泊松比。首先，假设采用维加德定律，泊松比为0.255 +/- 0.004，远低于预期（III-V半导体材料> 0.31）。但是，如果假定先前两项研究中提出的非线性关系，则可获得较高的值0.322 +/- 0.004和0.328 +/- 0.004。这些高值与通过独立测量获得的值非常一致。我们的结果表明，在描述AlGaAs晶格常数与其组成之间的关系时，偏离了Vegard定律。 [参考：26]

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