Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

Martino M.; Fernandez M.; Anobile P.; Petruzzelli V.; Luches A.

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Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

机译：脉冲XeCl激光烧蚀沉积的铟锡氧化物薄膜的特性

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Thin (6-320 nm) indium tin oxide films were deposited by pulsed excimer (XeCl) laser ablation. The lowest electrical resistivity (1.6 x 10(-6) Ohm m) was measured for samples deposited on moderately heated (200 degreesC) glass substrates. Optical transmissivity of the films in the range 400-1200 nm is higher than 80%. Ultra-thin (similar to6-9 nm) films were deposited and successfully used as transparent electrodes in optoelectronic devices. [References: 11]

机译：通过脉冲受激准分子（XeCl）激光烧蚀沉积（6-320 nm）铟锡氧化物薄膜。对于沉积在中度加热（200摄氏度）的玻璃基板上的样品，测量了最低电阻率（1.6 x 10（-6）欧姆）。薄膜在400-1200 nm范围内的透光率高于80％。沉积了超薄（类似于6-9 nm）膜，并成功地用作光电器件中的透明电极。 [参考：11]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2001年第17期|共4页
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Martino M.; Fernandez M.; Anobile P.; Petruzzelli V.; Luches A.;
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1. Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation [J] . Martino M., Fernandez M., Anobile P., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2001,第17期

机译：脉冲XeCl激光烧蚀沉积的铟锡氧化物薄膜的特性
2. A time-of-flight mass spectrometric study of laser fluence dependencies in SnO_2 ablation: implications for pulsed laser deposited tin oxide thin films [J] . Haiyan Fan, Wei Ho, Scott A. Reid International journal of mass spectrometry . 2003,第1期

机译：飞行时间质谱研究SnO_2烧蚀中的激光能量密度依赖性：对脉冲激光沉积的氧化锡薄膜的影响
3. Dielectric properties of pulsed-laser deposited indium tin oxide thin films [J] . G. Giusti, J. Bowen, Q. Ramasse, Thin Solid Films . 2012,第期

机译：脉冲激光沉积氧化铟锡薄膜的介电性能
4. Reactive pulsed laser ablation and deposition of thin indium tin oxide films for solid state compact sensors [C] . R. Teghil, V. Marotta, A. Giardini Guidoni, Symposium G on surface proceeding: Laser, lamp, plasma of the E-MRS conference . 1999

机译：用于固态紧凑型传感器的反应性脉冲激光烧蚀和稀铟锡氧化膜的沉积
5. Indium tin oxide films deposited by pulsed-laser ablation at room temperature. [D] . Morales Paliza, Manuel Angel. 2001

机译：在室温下通过脉冲激光烧蚀沉积的铟锡氧化物薄膜。
6. Indium Doped Zinc Oxide Thin Films Deposited by Ultrasonic Chemical Spray Technique Starting from Zinc Acetylacetonate and Indium Chloride [O] . Rajesh Biswal, Arturo Maldonado, Jaime Vega-Pérez, 2014

机译：通过超声化学喷涂技术沉积的掺杂铟的氧化锌薄膜从乙酰丙酮锌和氯化铟开始
7. Reactive pulsed laser ablation deposition (RPLAD) of indium tin oxide (ITO), titanium dioxide (TiO2) thin films and gold (AU) nanoparticles for dye sensitised solar cells (DSSC) applications [O] . Fotsa-Ngaffo Fernande 2008

机译：铟锡氧化物（ITO），二氧化钛（TiO2）薄膜和金（AU）纳米粒子的反应性脉冲激光烧蚀沉积（RPLAD），用于染料敏化太阳能电池（DSSC）应用

Characterization of thin indium tin oxide films deposited by pulsed XeCl laser ablation

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