Formation of YSi2-x layers on Si by high-current Y ion implantation

Wang RS.; Lai WS.; Liu BX.; Cheng XQ.

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Formation of YSi2-x layers on Si by high-current Y ion implantation

机译：通过大电流Y离子注入在Si上形成YSi2-x层

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Yttrium ion implantation was conducted to synthesize Y-disilicide films on silicon wafers, using a metal vapour vacuum arc ion source and the continuous and stable YSi2 films were directly obtained with neither external heating nor post-annealing. The formation mechanism of the YSi2 phase is also discussed, in terms of the temperature rise caused by ion beam heating and the ion dose in the process of implantation. [References: 16]

机译：使用金属蒸汽真空电弧离子源进行钇离子注入，以在硅片上合成Y-二硅化物膜，并且无需外部加热或后退火即可直接获得连续且稳定的YSi2膜。从离子束加热引起的温度升高和注入过程中的离子剂量方面，还讨论了YSi2相的形成机理。 [参考：16]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2001年第16期|共4页
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Wang RS.; Lai WS.; Liu BX.; Cheng XQ.;
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1. Formation of YSi2-x layers on Si by high-current Y ion implantation [J] . Wang RS., Lai WS., Liu BX., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2001,第16期

机译：通过大电流Y离子注入在Si上形成YSi2-x层
2. Formation of residual stresses in the surface layers of targets from heat-resistant titanium alloys by irradiation of high-current pulsed electron beams [J] . D A Teryaev, O A Bytsenko, V A Shulov, Journal of Physics: Conference Series . 2018,第3期

机译：大电流脉冲电子束辐照在耐热钛合金靶材表面形成残余应力
3. Formation of residual stresses in the surface layers of targets from heat-resistant titanium alloys by irradiation of high-current pulsed electron beams [J] . D A Teryaev, O A Bytsenko, V A Shulov, Journal of Physics: Conference Series . 2018,第3期

机译：大电流脉冲电子束辐照在耐热钛合金靶材表面形成残余应力
4. DEVICE STUDY OF SOURCE/DRAIN EXTENSION AND HALO FORMATION USING A SINGLE-WAFER, HIGH-CURRENT IMPLANTER [C] . S. B. Felch, M. A. Foad, C. Olsen, Proceedings vol.2005-05; Electrochemical Society(ECS) Meeting and International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment; 20050516-18; Quebec City(CA) . 2005

机译：使用单晶片高电流注入器进行源/漏扩展和光晕形成的设备研究
5. Nano-structured silicide formation by focused ion beam implantation and integration of silver metallization with thin film silicide layers. [D] . Mitan, Martin M. 2003

机译：通过聚焦离子束注入和银金属化与薄膜硅化物层的集成形成纳米结构的硅化物。
6. Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates [O] . Kirill Shcherbachev, Vladimir Privezentsev, Vaclav Kulikauskas, -1

机译：Zn注入的Si（001）衬底表面层热退火后的缺陷结构转变
7. The surface region multilayer structure and the residual oxygen effect on its formation during the TiNi alloy processing with a low-energy high-current electron beam [O] . L.L. Meisner 2019

机译：具有低能量高电流电子束的TINI合金加工过程中的表面积多层结构及其对其形成的残余氧气效应
8. Formation of buried epitaxial Si-Ge alloy layers in Sicrystal by high dose Ge ion implantation [R] . Yu, K. M., Brown, I. G., Im, S. 1991

机译：高剂量Ge离子注入在sicrystal中形成埋入式外延si-Ge合金层

Formation of YSi2-x layers on Si by high-current Y ion implantation

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