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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >MEASUREMENT OF THE LOCALIZED ELECTRONIC STRUCTURE ASSOCIATED WITH BISMUTH SEGREGATION TO COPPER GRAIN BOUNDARIES
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MEASUREMENT OF THE LOCALIZED ELECTRONIC STRUCTURE ASSOCIATED WITH BISMUTH SEGREGATION TO COPPER GRAIN BOUNDARIES

机译：与铋偏析相关的局部电子结构对铜晶粒边界的测量

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Grain boundaries in copper doped with small amounts of bismuth have been examined by spatially resolved electron energy loss spectroscopy (EELS). The electron energy loss or x-ray absorption near edge structure (ELNES or XANES) yields information on the bonding state of the probed atoms. A white line was detected near the threshold energy of the bulk Cu-L(2,3) absorption edge when the electron probe is located within f nm of the grain boundaries. This spectroscopic feature provides direct evidence that the grain boundary influences the local electronic structure and may have implications on how Bi embrittles the grain boundaries in Cu. Effects are only observed in those boundaries where the presence of Bi was confirmed using energy dispersive x-ray EDX spectroscopy. Furthermore, no evidence was found to indicate, within detection sensitivity limits, any co-segregation of oxygen to these boundaries. [References: 42]
机译：已通过空间分辨电子能量损失谱（EELS）检查了掺有少量铋的铜中的晶界。电子能量的损失或边缘结构（ELNES或XANES）附近的X射线吸收会产生有关被探测原子的键合状态的信息。当电子探针位于晶界的f nm内时，在块状Cu-L（2,3）吸收边缘的阈值能量附近检测到一条白线。这种光谱学特征提供了直接证据，表明晶界影响了局部电子结构，并且可能对Bi如何脆化Cu中的晶界产生影响。仅在使用能量色散X射线EDX光谱法确认存在Bi的边界中观察到了影响。此外，没有发现证据表明在检测灵敏度范围内，氧气共偏析到这些边界。 [参考：42]

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