Perturbation analysis of sheath evolution, with application to plasma source ion implantation

Bektursunova RM.; Demokan O.

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Perturbation analysis of sheath evolution, with application to plasma source ion implantation

机译：鞘层演化的扰动分析及其在等离子体源离子注入中的应用

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A perturbation model has been developed to describe the evolution of an expanding plasma sheath around a cathode after a high-voltage negative pulse is applied to the cathode, simulating the conditions in devices such as those used for plasma source ion implantation. The set of governing equations consists of two coupled collisionless fluid equations for ions, and Poisson's equation and Boltzmann's assumption for electrons. The time-dependent, self-consistent expressions for the potential, ion density and ion flux are obtained and compared successfully with experimental and simulation results. [References: 15]

机译：已经开发出一种扰动模型来描述在向阴极施加高压负脉冲后，围绕阴极的膨胀等离子体鞘层的演化，从而模拟了诸如等离子体源离子注入所用设备中的条件。控制方程组由两个耦合的离子无碰撞流体方程，泊松方程和电子的玻尔兹曼假设组成。获得了时间，自洽的势，离子密度和离子通量表达式，并将其与实验和仿真结果成功进行了比较。 [参考：15]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2001年第3期|共4页
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Bektursunova RM.; Demokan O.;
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1. Perturbation analysis of sheath evolution, with application to plasma source ion implantation [J] . Bektursunova RM., Demokan O. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2001,第3期

机译：鞘层演化的扰动分析及其在等离子体源离子注入中的应用
2. Numerical studies of collisionless and collisional sheath evolution in plasma source ion implantations [J] . Gong Y, Wang XG, Duan P, Physics of plasmas . 2005,第4期

机译：等离子体源离子注入中无碰撞和碰撞鞘层演化的数值研究
3. Ion sheath evolution and plasma replenishment inside an 80-mm-diameter pipe for plasma-based ion implantation and deposition [J] . X.X. Ma, K. Yukimura, T. Muraho Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2003,第May期

机译：直径80毫米的管内离子鞘的演化和等离子体的补充，用于基于等离子体的离子注入和沉积
4. Dynamic sheath studies in plasma source ion implantation [C] . Scheuer, J.T., Shamin, . 1990

机译：等离子体源离子注入中的动态鞘层研究
5. Energetic ion-based deposition and implantation of metal-nitride diffusion barriers for microelectronics applications by plasma source ion implantation. [D] . Wilson, Erik Hunt. 2001

机译：通过等离子源离子注入，在微电子应用中基于能量离子的金属氮化物扩散势垒沉积和注入。
6. Transvenous extraction of pacemaker and implantable cardioverter defibrillator leads using Evolution® mechanical dilator sheath: a single center confirmatory experience [O] . Uğur Kocabaş, Hamza Duygu, Nihan Kahya Eren, -1

机译：使用Evolution®机械扩张器护套通过静脉抽取起搏器和可植入的心脏复律除颤器导线：一次中心确认性体验
7. Numerical-Simulation of Plasma Sheath Expansion, with Applications to Plasma-Source Ion-Implantation [O] . Emmert, Gilbert A., Henry, Michael Arthur 1992

机译：等离子体鞘层扩展的数值模拟及其在等离子体源离子注入中的应用
8. Measurements of Spatial and Temporal Sheath Evolution for Spherical andCylindrical Geometries in Plasma Source Ion Implantation [R] . Shamim, M., Scheuer, J. T., Conrad, J. R. 1991

机译：等离子体源离子注入球形和圆柱几何形状时空鞘层演化的测量

Perturbation analysis of sheath evolution, with application to plasma source ion implantation

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