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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Ion beam induced changes in electrical resistivity of polymer films: the case of unplasticized poly(vinyl chloride)
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Ion beam induced changes in electrical resistivity of polymer films: the case of unplasticized poly(vinyl chloride)

机译:离子束引起的聚合物薄膜电阻率变化:未增塑的聚氯乙烯

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摘要

Electrical resistivity of the unplasticized poly(vinyl chloride) copolymer (UPVC) films irradiated with high-energy proton beams was studied with reference to a control sample, as a function of both ion energy and ion dose. Upon irradiation with beam energy ranging from 25 up to 37 MeV and at a beam fluence of 0.225 x 10(10) ion cm(-2), the room-temperature resistivity of the insulating films decreased by four orders of magnitude from its original value. Furthermore, using 25 MeV proton beams over a wide range of fluence (10(11)-10(15) cm(-2)), the room-temperature resistivity of the films decreased by only three orders. Then, the dependence of the resistivity rho(T) on the ion energy and fluence was also observed as the temperature T was progressively increased up to 373 K. The observed behaviour of rho(T) agrees with the charge transport model, consistent with a hopping mechanism in the polymer. In addition, the changes in the ac electrical resistivity of the irradiated UPVC films have been measured within the temperature range (293-373 K) and at different frequencies (100 kHz-3 MHz). [References: 22]
机译:参照对照样品,研究了用高能质子束辐照的未增塑聚氯乙烯共聚物(UPVC)薄膜的电阻率,该电阻率是离子能量和离子剂量的函数。在以25到37 MeV的射束能量辐照并且束流密度为0.225 x 10(10)ion cm(-2)时,绝缘膜的室温电阻率比其原始值降低了四个数量级。 。此外,使用25 MeV质子束在宽的注量范围(10(11)-10(15)cm(-2))上,薄膜的室温电阻率仅降低了三个数量级。然后,随着温度T逐渐升高到373 K,还观察到电阻率rho(T)对离子能量和注量的依赖性。rho(T)的观察到的行为与电荷传输模型一致,与聚合物中的跳跃机理。此外,已在温度范围(293-373 K)和不同频率(100 kHz-3 MHz)上测量了被辐照的UPVC薄膜的交流电阻率变化。 [参考:22]

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