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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Sensitivity reduction in biased amorphous selenium photoconductors
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Sensitivity reduction in biased amorphous selenium photoconductors

机译:偏置非晶硒光电导体的灵敏度降低

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We have experimentally studied the reduction in x-ray sensitivity of individual biased amorphous selenium (a-Se) detectors as a function of radiation dose. This study was performed to understand the effects of detector parameters on the reduction of sensitivity in a-Se active matrix flat panel imagers, which results in latent 'ghost' images. The sensitivity was measured for various x-ray dose rates, electric field strengths, and effective photon energies. The reduction of sensitivity has a weak dependence on the incident dose rate (reduces to 0.67 and 0.63 of original value after 100 cGy for dose rates of 2.73 cGy min(-1) and 8.18 cGy min(-1), respectively), is strongly affected by the applied electric field (reduces to 0.32 and 0.73 of original value after 100 cGy for electric fields of 0.6 V mum(-1) and 5 V mum(-1), respectively), and is greater for higher-energy photons. The measured sensitivity curves were fitted using a linear-exponential equation (reduced chi(2) values averaging 0.73). Experiments demonstrated that a-Se recovers approximately 20 0 of its original sensitivity at 30 min post-irradiation. If a-Se is allowed to recover its sensitivity for 24 h between irradiation, the initial measured current is a linear function of both the dose rate and applied electric field. [References: 15]
机译:我们已经通过实验研究了单个偏置非晶硒(a-Se)检测器的x射线灵敏度随辐射剂量的降低。进行这项研究是为了了解检测器参数对a-Se有源矩阵平板成像仪灵敏度降低的影响,从而导致潜在的“鬼影”图像。测量了各种X射线剂量率,电场强度和有效光子能量的灵敏度。灵敏度的降低对入射剂量率的依赖性很弱(在100 cGy后分别将2.73 cGy min(-1)和8.18 cGy min(-1)的剂量率降低至原始值的0.67和0.63)受外加电场的影响(对于0.6 V mum(-1)和5 V mum(-1)的电场,在100 cGy后分别降低到原始值的0.32和0.73),对于高能光子则更大。使用线性指数方程式拟合降低的灵敏度曲线(降低的chi(2)值平均为0.73)。实验表明,a-Se在照射后30分钟恢复了其原始灵敏度的20 0左右。如果允许a-Se在两次照射之间恢复24小时的灵敏度,则最初测得的电流是剂量率和所施加电场的线性函数。 [参考:15]

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