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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Leakage current and charge carriers in (Na0.5Bi0.5)TiO3 thin film
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Leakage current and charge carriers in (Na0.5Bi0.5)TiO3 thin film

机译：（Na0.5Bi0.5）TiO3薄膜中的漏电流和载流子

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摘要

A sodium bismuth titanate (Na0.5Bi0.5)TiO3 (NBT) thin film of perovskite structure, synthesized by radio-frequency magnetron sputtering, exhibited a remanent polarization of 11.9 mu C cm(-2) and a coercive field of 37.9 kV cm(-1) at room temperature. It however showed a rather high leakage current density of similar to 6 x 10(-5) A cm(-2) at an applied electric field of 100 kV cm(-1). There occurs a change in the controlling mechanism of the electrical behaviours of the NBT thin film from grain interiors to grain boundaries with increasing temperature. The ac conductivity obeys the Jonscher relation. The activation energies for dc conductivity and hopping frequency of the charge carriers are calculated to be 0.92 eV and 1.00 eV, respectively, suggesting oxygen vacancies are the most likely charge carriers at high temperatures. Hopping of oxygen vacancies trapped at the grain boundaries and excitation of polarons in the grain interior are responsible for the relatively high dielectric loss and high dc conductivity. The contribution of hopping charge carriers to the dielectric response is demonstrated by the frequency dispersion observed for the relative permittivity in the low frequency region.
机译：射频磁控溅射合成钙钛矿结构钛酸铋钠（Na0.5Bi0.5）TiO3（NBT）薄膜，其剩余极化强度为11.9μC cm（-2），矫顽场为37.9 kV cm （-1）在室温下。但是，在100 kV cm（-1）的施加电场下，它显示出相当高的泄漏电流密度，类似于6 x 10（-5）A cm（-2）。随着温度的升高，NBT薄膜的电行为控制机制发生了从晶粒内部到晶界的变化。交流电导率服从Jonscher关系。电荷载流子的直流电导率和跳跃频率的活化能分别计算为0.92 eV和1.00 eV，这表明在高温下氧空位是最可能的电荷载流子。晶界处捕获的氧空位的跳跃和晶格内部的极化子的激发是造成较高介电损耗和较高直流电导率的原因。跳频电荷载流子对介电响应的贡献通过在低频区域观察到的相对介电常数的频率色散来证明。

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