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首页> 外文期刊>Journal of Physics. Condensed Matter >The origin of multiple spin-relaxation channels below the metal-insulator transition in ferromagnetic colossal magnetoresistance (CMR) manganites
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The origin of multiple spin-relaxation channels below the metal-insulator transition in ferromagnetic colossal magnetoresistance (CMR) manganites

机译：铁磁巨磁致电阻（CMR）锰矿中金属-绝缘体转变以下的多个自旋弛豫通道的起源

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摘要

We report a series of measurements in (La, Ca, Pr)MnO3 compounds which show that ferromagnetic (FM) CMR compounds develop two Mn-ion spin-lattice relaxation channels as the materials are cooled below their insulator-to-metal transition temperature T-MI. This result is in contrast to conventional FMs and is attributed to the presence of both insulating and conducting FM regions below T-MI which coexist on a microscopic scale. The coexistence of different phases is found in both polycrystalline and single-crystalline materials, though the single crystal exhibits a narrower temperature region of phase coexistence below its FM critical temperature T-C. Possible differences between crystalline and granular materials which could give rise to these findings are discussed. These results could have important implications for the use of CMR materials in spintronics devices, which rely on conducting surfaces in thin film multilayers below T-C.
机译：我们报告了一系列（La，Ca，Pr）MnO3化合物的测量结果，这些结果表明，铁磁（FM）CMR化合物在材料冷却到其绝缘体到金属的转变温度T以下时，会形成两个Mn离子自旋晶格弛豫通道。 -MI。该结果与常规FM相反，并且归因于在微观尺度上共存的T-MI以下的绝缘和导电FM区域的存在。在多晶和单晶材料中都发现了不同相的共存，尽管单晶在其FM临界温度T-C以下显示出较窄的相共存温度区域。讨论了结晶和颗粒状材料之间可能引起这些发现的差异。这些结果可能对自旋电子器件中CMR材料的使用具有重要意义，该器件依赖于T-C以下薄膜多层中的导电表面。

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