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首页> 外文期刊>Journal of Sol-Gel Science and Technology >Electrical Properties of Carbon Black and Ruthenium Dioxide Embedded Silica Films
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Electrical Properties of Carbon Black and Ruthenium Dioxide Embedded Silica Films

机译：炭黑和二氧化钌嵌入式二氧化硅薄膜的电性能

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摘要

The electrical properties of sol-gel-derived films can be tailored by embedding conductive particles of ruthenium dioxide or carbon black in an insulating amorphous SiO_2 silica matrix.The preparation process included an acid hydrolysis of tetraethoxysilane and methyltrimethoxysilane.Then alcohol solutions of ruthenium chloride or carbon black were added.Films of filler concentration up to 60 vol.% were prepared by dip coating and then dried and heat-treated at various temperatures up to 600degC.The D.C.resistance of the films can be varied within the range of 10~9 to 10~(-2) OMEGAcentre dotcm.A non-linear dependence on filler composition in the films was observed for both systems,which is explained by a modified percolation theory.A percolation threshold of 5.5 vol.% for SiO_2-RuO_2 or 50 vol.% for SiO_2-C films,whereby the resistance drastically decreases,was determined.Moreover the temperature dependency of resistance and the current-voltage characteristics of the films can also be explained by this geometric model.
机译：可以通过将二氧化钌或炭黑的导电颗粒嵌入绝缘的无定形SiO_2二氧化硅基质中来调整溶胶-凝胶衍生薄膜的电性能。制备过程包括四乙氧基硅烷和甲基三甲氧基硅烷的酸水解，然后用氯化钌或加入炭黑，通过浸涂制备填充剂浓度达60％（体积）的薄膜，然后在高达600°C的各种温度下干燥和热处理，薄膜的直流电阻可在10〜9的范围内变化到10〜（-2）OMEGA中心点cm。，这两个系统都观察到薄膜中填料组成的非线性相关性，这是通过改进的渗流理论解释的.SiO_2-RuO_2或50的渗流阈值为5.5 vol。％确定了SiO_2-C薄膜的vol。％，从而使电阻急剧降低。此外，电阻的温度依赖性和薄膜的电流-电压特性也可以由这个几何模型解释。

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