...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Sol-Gel Science and Technology >Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by gamma-Ray Irradiation
【24h】

Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by gamma-Ray Irradiation

机译：γ射线辐照的Ge掺杂Sol-Gel二氧化硅中与氢有关的顺磁中心

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have studied the generation mechanisms of H(II)paramagnetic centers in Ge-doped silica by investigating up to 10~4mol ppm sol-gel Ge-doped silica materials.We have considered materials with the same concentrations of Ge but that are produced by two different densification routes that give rise to different concentrations of Ge-related oxygen deficient centers (GeODC(II)).These centers are characterized by an optical absorption band at approx5.2eV (B_(2beta)band)and two related emissions at approx3.2 eV and approx4.3 eV.The GeODC(II)content was estimated by absorption and emission measurements.The H(II)centers were induced by room temperature gamma-ray irradiation and their concentration was determined by electron paramagnetic resonance measurements.The comparison between the two kinds of materials,obtained by different preparations,shows that the GeODC(II)concentration increases with the Ge content and is enhanced by vacuum densification.The comparison of irradiated samples shows that beyond the already known process of conversion of preexisting GeODC(II)into H(II)centers,another generation process of H(II)centers is effective that involves irradiation induced GeODC(II).
机译：通过研究高达10〜4mol ppm的溶胶凝胶Ge掺杂二氧化硅材料，我们研究了Ge掺杂二氧化硅中H（II）顺磁中心的生成机理。我们考虑了具有相同Ge浓度但由两种不同的致密化途径导致了与Ge相关的氧缺陷中心（GeODC（II））的浓度不同。这些中心的特征是在大约5.2eV的光吸收带（B_（2β）波段）和在大约3 .2 eV和约4.3 eV.GeODC（II）含量通过吸收和发射测量估算.H（II）中心通过室温伽马射线辐照诱导，其浓度通过电子顺磁共振测量确定。通过不同制备方法获得的两种材料的比较表明，GeODC（II）的浓度随Ge含量的增加而增加，并通过真空致密化得到提高。除了将现有的GeODC（II）转化为H（II）中心的已知过程之外，H（II）中心的另一生成过程是有效的，涉及辐射诱导的GeODC（II）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号