Synergetics of Catastrophic Failures of Semiconductor Devices under High-Energy Ion Irradiation

B. L. Oksengendler; F. G. Dzhurabekova; S. E. Maksimov; N. Yu. Turaev

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Synergetics of Catastrophic Failures of Semiconductor Devices under High-Energy Ion Irradiation

机译：高能离子辐照下半导体器件灾难性故障的协同效应

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摘要

A synergetic theory of the radiation damage of semiconductor equipment is presented. The general approach is applied to explain the failure of the space vehicle "Fobos-Grunt."

机译：提出了半导体设备辐射损伤的协同理论。通用方法用于解释太空飞行器“ Fobos-Grunt”的故障。

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来源
《Journal of surface investigation: x-ray, synchrotron and neutron techniques》 |2016年第2期|共5页
作者
B. L. Oksengendler; F. G. Dzhurabekova; S. E. Maksimov; N. Yu. Turaev;
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正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
synergetics; radiation effects; catastrophic failure;

机译：协同作用;辐射效应;灾难性破坏;

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专利

1. Synergetics of Catastrophic Failures of Semiconductor Devices under High-Energy Ion Irradiation [J] . B. L. Oksengendler, F. G. Dzhurabekova, S. E. Maksimov, Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2016,第2期

机译：高能离子辐照下半导体器件灾难性故障的协同效应
2. Extended free-volume defects in chalcogenide glassy semiconductors induced by high-energy y-irradiation [J] . Valentina Balitska, Jacek Filipecki, Oleh Shpotyuk Physica status solidi . 2009,第8期

机译：高能Y辐射引起的硫族化物玻璃态半导体中扩展的自由体积缺陷
3. Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation [J] . Ma Teng, Yu Xuefeng, Paccagnella Alessandro, Microelectronics & Reliability . 2019,第Nova期

机译：研究高能重离子辐照导致部分耗尽的SOI器件的潜在可靠性下降
4. Influence of preliminary irradiation by gamma-quanta on development of catastrophic failures during operation of IR-LEDs [C] . A V Gradoboev, A V Simonova International Congress on Energy Fluxes and Radiation Effects . 2016

机译：γ-量子对IR-LED运行期间灾难性故障发展的影响
5. Effects of high-energy electron irradiation on zinc oxide/silicon metal-semiconductor-metal photodetectors [D] . Catalfamo, Franklin C. 2010

机译：高能电子辐照对氧化锌/硅金属-半导体-金属光电探测器的影响
6. Fast exact and non-destructive diagnoses of contact failures in nano-scale semiconductor device using conductive AFM [O] . ChaeHo Shin, Kyongjun Kim, JeongHoi Kim, -1

机译：使用导电原子力显微镜快速准确无损地诊断纳米级半导体器件中的接触故障
7. Radiation effects and damage formation in semiconductors due to high-energy ion irradiation [O] . Kamarou Andrey 2006

机译：高能离子辐照在半导体中的辐射效应和损伤形成
8. Metallization Failures in Semiconductor Devices [R] . Schramp, J. M. 1966

机译：半导体器件中的金属化失效

Synergetics of Catastrophic Failures of Semiconductor Devices under High-Energy Ion Irradiation

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