Kinetics of the Formation of Oxide Nanostructures on n-Si in the Potentiostatic Mode of Water Anodization

A. M. Orlov; I. O. Yavtushenko; M. Yu. Makhmud-Akhunov; A. A. Solovyev

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Kinetics of the Formation of Oxide Nanostructures on n-Si in the Potentiostatic Mode of Water Anodization

机译：水阳极氧化恒电位模式下n-Si上氧化物纳米结构形成的动力学

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摘要

The results of studies of the morphological properties of an oxide film obtained by the anodic oxidation of a n-Si(100) single-crystal silicon wafer in distilled water in the potentiostatic mode are presented. Irrespective of the value of the applied potential and the anodic treatment time, the oxide coating is always formed as separate islands, interconnected by a thin layer of barrier oxide, the thickness of which is adjusted by the pH value of an alkaline solution (pH > 7) produced in a limited area of local oxidation.

机译：提出了通过在恒电位模式下在蒸馏水中对n-Si（100）单晶硅晶片进行阳极氧化而获得的氧化膜的形态学特性的研究结果。不管施加的电势值和阳极处理时间如何，氧化物涂层始终形成为单独的岛，并由一层薄薄的势垒氧化物互连，其厚度由碱性溶液的pH值（pH> 7）在有限的区域内产生局部氧化。

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《Journal of surface investigation: x-ray, synchrotron and neutron techniques》 |2016年第2期|共5页
作者
A. M. Orlov; I. O. Yavtushenko; M. Yu. Makhmud-Akhunov; A. A. Solovyev;
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正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
semiconductor n-Si; thin films; anodic nanostructuring;

机译：半导体n-Si;薄膜;阳极纳米结构;

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3. Kinetics of the Formation of Oxide Nanostructures on n-Si in the Potentiostatic Mode of Water Anodization [J] . A. M. Orlov, I. O. Yavtushenko, M. Yu. Makhmud-Akhunov, Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2016,第2期

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Kinetics of the Formation of Oxide Nanostructures on n-Si in the Potentiostatic Mode of Water Anodization

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