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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Modification of MIS Structures by Electron Irradiation and High-Field Electron Injection
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Modification of MIS Structures by Electron Irradiation and High-Field Electron Injection

机译：电子辐照和高场电子注入修饰MIS结构

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摘要

The change in the charge state of metal–insulator–semiconductor (MIS) structures with a twolayer silicon-dioxide–phosphosilicate-glass gate insulator upon their modification under electron irradiation and high-field electron injection is studied. A thin glass film is formed by doping a thermal SiO_2 film formed on the surface of a silicon wafer with phosphorus. It is found that the negative charge accumulated in a thin film of phosphosilicate glass during high-field tunneling electron injection or electron irradiation can be used to adjust the threshold voltage and to increase the charge stability and the breakdown voltage of MIS devices. It is shown that MIS structures need to be annealed at a temperature of approximately 200°C to obtain high thermal-field stability after modification of their charge state by the electron injection or electron irradiation. It is found that the use of a two-layer silicon-dioxide–phosphosilicate-glass gate dielectric increases the average value of the charge injected into the insulator to breakdown and decreases the amount of defect structures.
机译：研究了具有二层二氧化硅-磷硅酸盐-玻璃栅绝缘体的金属-绝缘体-半导体（MIS）结构在电子辐照和高场电子注入作用下的电荷状态变化。通过用磷掺杂形成在硅晶片表面上的热SiO 2膜来形成玻璃薄膜。发现在高场隧穿电子注入或电子辐照期间在磷硅酸盐玻璃的薄膜中累积的负电荷可用于调节阈值电压并增加电荷稳定性和MIS器件的击穿电压。已经表明，MIS结构需要在大约200℃的温度下退火以在通过电子注入或电子辐照改变它们的电荷状态之后获得高的热场稳定性。发现使用两层二氧化硅-磷硅酸盐-玻璃栅极电介质会增加注入绝缘体中以击穿的电荷的平均值，并减少缺陷结构的数量。

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