Peculiarities of the Initial Stage of Growth of Niobium-Based Nanostructures on a Si(111)-7 × 7 Surface

A. V. Putilov; D. A. Muzychenko; A. Yu. Aladyshkin

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Peculiarities of the Initial Stage of Growth of Niobium-Based Nanostructures on a Si(111)-7 × 7 Surface

机译：Si（111）-7×7表面上基于铌的纳米结构生长初期的特殊性

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The initial stage of growth of nanoislands prepared by thermal deposition of niobium on the reconstructed surface of Si(111)-7 × 7 in ultrahigh vacuum is experimentally investigated. The morphological and electrophysical properties of niobium-based nanostructures are studied by means of low-temperature scanning tunneling microscopy and spectroscopy. It is found that upon the deposition of niobium on a substrate at room temperature, clusters and nanoislands are formed on the silicon surface, having a characteristic lateral size of 10 nm with the metallic type of tunneling conductivity at low temperatures. Upon the deposition of niobium on a heated substrate, quasi-one-dimensional (1D) and quasi-two-dimensional (2D) structures with typical lateral dimensions of up to 200 nm and three-dimensional pyramidal islands with semiconducting type of tunneling conductivity at low temperatures are formed.

机译：通过实验研究了铌在超高真空下热沉积在Si（111）-7×7的重建表面上所形成的纳米岛的生长初期。通过低温扫描隧道显微镜和光谱学研究了铌基纳米结构的形貌和电物理性质。发现在室温下在衬底上沉积铌时，在硅表面上形成簇和纳米岛，其具有10nm的特征横向尺寸，并且在低温下具有金属类型的隧穿电导率。在将铌沉积在加热的基板上时，准一维（1D）和准二维（2D）结构的典型横向尺寸最大为200 nm，并且具有三棱锥岛，并具有半导电类型的隧穿电导率形成低温。

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《Journal of surface investigation: x-ray, synchrotron and neutron techniques》 |2016年第2期|共9页
作者
A. V. Putilov; D. A. Muzychenko; A. Yu. Aladyshkin;
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正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
scanning tunneling microscopy; niobium-based nanostructures; thermal deposition; island nanostructures;

机译：扫描隧道显微镜;铌基纳米结构;热沉积;岛状纳米结构;

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1. Peculiarities of the Initial Stage of Growth of Niobium-Based Nanostructures on a Si(111)-7 × 7 Surface [J] . A. V. Putilov, D. A. Muzychenko, A. Yu. Aladyshkin Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2016,第2期

机译：Si（111）-7×7表面上基于铌的纳米结构生长初期的特殊性
2. STM observation of initial stage of growth of Si-Mn films on Si(111)7 x 7 surface [J] . Yokotani Atsushi, Kihara Ryota, Nakayoshi Kohei Journal of Ceramic Processing Research. (Text in English) . 2015,第1期

机译：STM观察Si（111）7 x 7表面Si-Mn膜生长的初始阶段
3. Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 × 1) surface [J] . Kawaguchi Ryo, Eguchi Toyoaki, Suto Shozo Surface Science . 2019,第AUGa期

机译：H终止的Si（111）-（1×1）表面上Fe的生长初期和界面形成的原子学研究
4. Initial stages of Ni-driven nanostructures growth on Ag/Ge(111)-√3×√3 surface [C] . Tomaszewska Agnieszka, Huang Xiao-Lan, Lin Chun-Liang, 2011 IEEE 4th International Nanoelectronics Conference . 2011

机译：Ni驱动的纳米结构在Ag / Ge（111）-√3×√3表面的生长初期
5. Study of the initial stages of growth of self assembled germanium nanostructure on silicon(001) [D] . Zhu, Jinggang. 2004

机译：硅（001）上自组装锗纳米结构生长初期的研究
6. Initial stage growth of GexSi1−x layers and Ge quantum dot formation on GexSi1−x surface by MBE [O] . Aleksandr I Nikiforov, Vyacheslav A Timofeev, Serge A Teys, 2012

机译：MBE在GexSi1-x层的初始生长和在GexSi1-x表面上的Ge量子点的形成
7. Electrical conductance at initial stage in epitaxial growth of Pb on modified Si(111) surface [O] . Korczak, Z., Kwapinski, T. 2006

机译：pb外延生长初始阶段的电导率改性si（111）表面
8. Initial Stages of Growth and Formation of CaF2 Nanostructures on Si (001). [R] . Pasquali, L., D'Addato, S., Nannarone, S., 2001

机译：si（001）上生长的初始阶段和CaF2纳米结构的形成。

Peculiarities of the Initial Stage of Growth of Niobium-Based Nanostructures on a Si(111)-7 × 7 Surface

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