On a Modified Projection Scheme of the Least-Squares Method for the Modeling of the Distribution of Minority Charge Carriers Generated by an Electron Beam in a Homogeneous Semiconductor Material

E. V. Seregina; M. A. Stepovich; A. M. Makarenkov

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On a Modified Projection Scheme of the Least-Squares Method for the Modeling of the Distribution of Minority Charge Carriers Generated by an Electron Beam in a Homogeneous Semiconductor Material

机译：关于均方半导体材料中电子束产生的少数载流子分布建模的最小二乘方法的修正投影方案

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A modified projection scheme of the least-squares method is considered for modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material. The order estimate is given, and the condition for the computational stability of the proposed modified projection scheme is obtained in the form of the limiting relation.

机译：考虑了最小二乘法的改进投影方案，以对由电子束在均质半导体材料中产生的少数载流子的分布进行建模。给出了阶数估计，并以极限关系的形式获得了所提出的改进投影方案的计算稳定性的条件。

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《Journal of surface investigation: x-ray, synchrotron and neutron techniques》 |2013年第6期|共4页
作者
E. V. Seregina; M. A. Stepovich; A. M. Makarenkov;
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正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
Modified; Material; Projection;

机译：修改;材料;投影;

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1. On a Modified Projection Scheme of the Least-Squares Method for the Modeling of the Distribution of Minority Charge Carriers Generated by an Electron Beam in a Homogeneous Semiconductor Material [J] . E. V. Seregina, M. A. Stepovich, A. M. Makarenkov Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2013,第6期

机译：关于均方半导体材料中电子束产生的少数载流子分布建模的最小二乘方法的修正投影方案
2. On Some Problems of Modeling the Distributions of Minority Charge Carriers Generated by an Electron Beam in a Semiconductor Material [J] . E. V. Seregina, M. A. Stepovich, A. M. Makarenkov, Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2016,第2期

机译：关于电子束在半导体材料中产生的少数载流子分布建模的一些问题
3. Analysis of the Three-Dimensional Model of Diffusion of Minority Charge Carriers Generated by an Electron Probe in a Heterogeneous Semiconductor Material by Means of Projection Methods [J] . E. V. Seregina, M. A. Stepovich, A. M. Makarenkov Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2018,第1期

机译：通过投影方法分析了异质半导体材料中电子探针在异构半导体材料中产生的少数屈光载波的三维模型
4. The orthogonal-projection method for solving equations of diffusion of minority charge carriers generated by the electron beam in semiconductors [C] . A.A. Belov, N.D. Egupov, A.A. Samokhvalov, Problems of Theoretical and Applied Electron and Ion Optics . 2003

机译：正交投影法求解半导体中电子束产生的少数载流子扩散方程
5. MINORITY CARRIER KINETICS IN DEFECT TRAP DISTRIBUTIONS IN SEMICONDUCTORS: APPLICATION TO TRIGONAL SELENIUM SINGLE CRYSTALS. [D] . SWINEHART, PHILIP ROSS. 1974

机译：半导体中缺陷陷阱分布中的少数载流子动力学：在三角硒单晶中的应用。
6. Organic Semiconductors: Zigzag‐Elongated Fused π‐Electronic Core: A Molecular Design Strategy to Maximize Charge‐Carrier Mobility (Adv. Sci. 1/2018) [O] . Akito Yamamoto, Yoshinori Murata, Chikahiko Mitsui, 2018

机译：有机半导体：之字形伸长的融合π电子核：最大化载流子迁移率的分子设计策略（Adv。Sci.1 / 2018）
7. Measurement of minority charge carrier diffusion length in Gallium Nitride nanowires using Electron Beam InducedCurrent (EBIC) [O] . Ong Chiou Perng 2009

机译：使用电子束感应电流（EBIC）测量氮化镓纳米线中少数载流子扩散长度

On a Modified Projection Scheme of the Least-Squares Method for the Modeling of the Distribution of Minority Charge Carriers Generated by an Electron Beam in a Homogeneous Semiconductor Material

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