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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Kinetics of aggregations of F_2, F_3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing
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Kinetics of aggregations of F_2, F_3, X, and colloid centers in LiF/Si(111) films upon low-temperature annealing

机译:低温退火后LiF / Si(111)薄膜中F_2,F_3,X和胶体中心的聚集动力学

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摘要

The temperature dependence of the generation kinetics of F centers and their aggregates in a LiF/Si(111) thin-film system after irradiation with low-energy (80-eV) electrons was studied by total current spectroscopy. It was shown that, in all cases, low-temperature annealing results in degradation of the formed centers followed by their coalescence. A new absorption band with an energy of 3. 6 eV corresponding to anionic cluster complexes was found.
机译:通过总电流光谱法研究了低能(80-eV)电子辐照后LiF / Si(111)薄膜系统中F中心及其聚集体的生成动力学的温度依赖性。结果表明,在所有情况下,低温退火都会导致所形成的中心降解,然后聚结。发现了一个新的吸收带,其能量为3. 6 eV,对应于阴离子簇复合物。

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