...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Effect of the Low-Temperature (20-60°C) Heating of Silicon on Its Microhardness
【24h】

Effect of the Low-Temperature (20-60°C) Heating of Silicon on Its Microhardness

机译：低温（20-60°C）硅加热对其显微硬度的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Changes in the microhardness of silicon samples exposed to temperatures of 20-60°C are studied. It is found that the microhardness increases; this effect is preserved at room temperature for 20 min and nonmonotonically depends on the temperature and exposure time (the changes are maximal at ~40°C and ~100 s, respectively). The microhardness of samples with native oxide removed does not change. The results are discussed in terms of a model of processes in the silicon-oxide system, which was previously proposed for the case of irradiation of silicon with light. The practical importance of the effect is discussed.
机译：研究了暴露于20-60°C温度下的硅样品的显微硬度变化。发现显微硬度增加;这种效应在室温下可保留20分钟，并且非单调取决于温度和暴露时间（变化分别在〜40°C和〜100 s时最大）。去除天然氧化物的样品的显微硬度不会改变。根据氧化硅系统中的过程模型讨论了结果，该模型先前是针对用光照射硅的情况提出的。讨论了效果的实际重要性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号