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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Low-Temperature X-Ray Studies of TlInS_2, TlGaS_2, and TlGaSe_2 Single Crystals
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Low-Temperature X-Ray Studies of TlInS_2, TlGaS_2, and TlGaSe_2 Single Crystals

机译:TlInS_2,TlGaS_2和TlGaSe_2单晶的低温X射线研究

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摘要

The results of X-ray diffraction studies of the unit-cell parameters and thermal-expansion coefficients of TlInS_2, TlGaS_2, and TlGaSe_2 crystals in the temperature range 100-300 K are described. It is shown that the unit-cell parameters of all the studied crystals gradually increase with increasing temperature. The temperature dependences of these parameters exhibit anomalies in the form of bends and kinks at temperatures corresponding to phase transitions in the crystals. The thermal-expansion coefficients along the [001] crystallographic direction of the crystals under study are determined. It is found that their values slightly change with increasing temperature.
机译:描述了在100-300 K温度范围内TlInS_2,TlGaS_2和TlGaSe_2晶体的晶胞参数和热膨胀系数的X射线衍射研究结果。结果表明,随着温度的升高,所有研究晶体的晶胞参数逐渐增加。这些参数的温度依赖性在与晶体中的相变相对应的温度下呈现弯曲和扭折形式的异常。确定了所研究晶体沿[001]晶体学方向的热膨胀系数。发现它们的值随温度升高而略有变化。

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