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首页> 外文期刊>Journal of surface investigation: x-ray, synchrotron and neutron techniques >Cathodoluminescence Studies of Exciton Diffusion in Gallium Nitride
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Cathodoluminescence Studies of Exciton Diffusion in Gallium Nitride

机译:氮化镓中激子扩散的阴极发光研究

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摘要

Gallium nitride is used as an example to show the possibilities of the application of a developed threedimensional mathematical model in the cathodoluminescence studies of direct-gap semiconductor materials using the time-of-flight procedure for obtaining quantitative information on their properties. The values of the diffusion coefficient in gallium nitride are determined from the results of its experimental studies.
机译:以氮化镓为例,展示了使用发展的三维数学模型在直缝半导体材料的阴极发光研究中应用飞行时间程序获得其性能定量信息的可能性。氮化镓中扩散系数的值由其实验研究的结果确定。

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