We experimentally demonstrate the equivalence of different manifestations of nonlinear response in high temperature superconductor (HTS) microwave devices. Using a combination of analytical and numerical analysis, we show that the results of inter modulation distortion measurements, harmonic generation measurements, and power-dependent resonator measurements of different coplanar waveguide structures patterned onto the same HTS thin-film sample all yield approximately the same values for the nonlinear penetration depth. The extraction of an underlying nonlinear material parameter that is independent of the specific device geometry and experimental configuration will allow our results to be quantitatively compared with other nonlinear measurements, and will therefore help in determining the dominant source(s) of nonlinear response in HTS microwave devices.
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