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首页> 外文期刊>Journal of Superconductivity >Manifestation of local magnetic domain reversal by spin-polarized carrier injection in (Ga,Mn)As thin films
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Manifestation of local magnetic domain reversal by spin-polarized carrier injection in (Ga,Mn)As thin films

机译：在（Ga，Mn）As薄膜中通过自旋极化载流子注入表现出局部磁畴反转

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摘要

Recently, we have reported that the spin-polarized holes generated by the irradiation with circularly polarized light can change the magnetization orientation of III-V ferromagnetic semiconductor (Ga,Mn)As via p-d exchange interaction. In this paper, we report that a small portion of change does not return to the initial state after the light is turned off. This residual component, named as the memorization effect, exhibits ferromagnetic characteristics. This fact strongly suggests that small magnetic domains having the perpendicular magnetic axis are rotated by photogenerated carrier spins.
机译：最近，我们报道了通过圆偏振光照射产生的自旋极化孔可以通过p-d交换相互作用改变III-V型铁磁半导体（Ga，Mn）As的磁化方向。在本文中，我们报告灯关闭后，一小部分更改不会恢复到初始状态。这种残留成分被称为记忆效应，表现出铁磁特性。这一事实强烈表明，具有垂直磁轴的小磁畴通过光生载流子自旋而旋转。

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