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首页> 外文期刊>Journal of Semiconductors >Effect of chelating agent concentration in alkaline Cu CMP process under the condition of different applied pressures
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Effect of chelating agent concentration in alkaline Cu CMP process under the condition of different applied pressures

机译：不同施加压力条件下碱性Cu CMP工艺中螯合剂浓度的影响

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摘要

We propose the action mechanism of Cu chemical mechanical planarization (CMP) in an alkaline solution. Meanwhile, the effect of abrasive mass fraction on the copper removal rate and within wafer non-uniformity (WIWNU) have been researched. In addition, we have also investigated the synergistic effect between the applied pressure and the FA/O chelating agent on the copper removal rate and WIWNU in the CMP process. Based on the experimental results, we chose several concentrations of the FA/O chelating agent, which added in the slurry can obtain a relatively high removal rate and a low WIWNU after polishing, to investigate the planarization performance of the copper slurry under different applied pressure conditions. The results demonstrate that the copper removal rate can reach 6125 ?/min when the abrasive concentration is 3 wt.%. From the planarization experimental results, we can see that the residual step height is 562 ? after excessive copper of the wafer surface is eliminated. It denotes that a good polishing result is acquired when the FA/O chelating agent concentration and applied pressure are fixed at 3 vol% and 1 psi, respectively. All the results set forth here are very valuable for the research and development of alkaline slurry.
机译：我们提出了碱性溶液中铜化学机械平面化（CMP）的作用机理。同时，研究了磨料质量分数对铜去除率和晶片不均匀性（WIWNU）的影响。此外，我们还研究了施加压力和FA / O螯合剂对CMP工艺中铜去除率和WIWNU的协同作用。根据实验结果，我们选择了几种浓度的FA / O螯合剂，将其加入浆料中抛光后可获得较高的去除率和较低的WIWNU，以研究铜浆料在不同施加压力下的平面化性能。条件。结果表明，当磨料浓度为3wt。％时，铜的去除速率可以达到6125Ω/ min。从平面化实验结果可以看出，剩余台阶高度为562Ω。在去除晶片表面的过量铜之后。这表示当将FA / O螯合剂浓度和施加压力分别固定在3vol％和1psi时可获得良好的抛光效果。此处列出的所有结果对于碱性浆料的研究和开发非常有价值。

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