Simulation study of new 3-terminal devices for high speed STT-RAM

Zhang Shuchao; Hu Jiangfeng; Chen Peiyi; Deng Ning

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Simulation study of new 3-terminal devices for high speed STT-RAM

机译：新型3端子高速STT-RAM的仿真研究

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To improve the performance of spin transfer torque random access memory (STT-RAM), especially writing speed, we propose three modified 3-terminal STT-RAM cells. A magnetic dynamic process in the new structures was investigated through micro-magnetic simulation. The best switching speed of the new structures is 120% faster than that of the rectangular 3-terminal device. The optimized 3-terminal device offers high speed while maintaining the high reliability of the 3-terminal structure.

机译：为了提高自旋传递扭矩随机存取存储器（STT-RAM）的性能，尤其是提高写入速度，我们提出了三种改进的3端子STT-RAM单元。通过微磁模拟研究了新结构中的磁动力学过程。新结构的最佳开关速度比矩形3端子器件快120％。经过优化的3端子设备在保持3端子结构的高可靠性的同时提供了高速。

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来源
《Journal of Semiconductors》 |2011年第7期|共3页
作者
Zhang Shuchao; Hu Jiangfeng; Chen Peiyi; Deng Ning;
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正文语种 eng
中图分类无线电电子学、电信技术;
关键词
spin transfer torque; non-volatile memory; spin valve; micro-magnetic simulation;

机译：自旋传递扭矩;非易失性存储器;自旋阀;微磁仿真;

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Simulation study of new 3-terminal devices for high speed STT-RAM

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