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首页> 外文期刊>Journal of the Korean Physical Society >Effect of annealing temperature and layer thickness on the opto-electrical properties of transparent conducting Zn/SnO2/Zn multilayer thin films
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Effect of annealing temperature and layer thickness on the opto-electrical properties of transparent conducting Zn/SnO2/Zn multilayer thin films

机译：退火温度和层厚对透明导电Zn / SnO2 / Zn多层薄膜光电性能的影响

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摘要

Highly transparent Zn/SnO2/Zn conducting multilayer films are prepared on quartz glass substrates by using RF sputtering. The deposited films were annealed at various temperatures for thermal diffusion. The influences of annealing temperature, annealing time and the zinc thickness on the structural, electrical and optical properties of the multilayer films were studied. X-ray diffraction results showed that all p-type conducting films possessed polycrystalline SnO2 with a tetragonal rutile structure. Hall measurements indicates that annealing at 450 A degrees C for 2 h was the optimum annealing parameters for p-type Zn (5 nm)/SnO2 (300 nm)/Zn (5 nm) multilayer films with a hole concentration and resistivity of 9.80 x 10(16) cm(-3) and 352 Omega A center dot cm, respectively. The average transmission of the p-type Zn/SnO2/Zn multilayer films was above 87% in the visible range.
机译：通过使用RF溅射在石英玻璃基板上制备高透明的Zn / SnO2 / Zn导电多层膜。所沉积的膜在各种温度下退火以进行热扩散。研究了退火温度，退火时间和锌厚度对多层膜结构，电学和光学性能的影响。 X射线衍射结果表明，所有的p型导电膜都具有具有四方金红石结构的多晶SnO 2。霍尔测量表明，在450 A的温度下退火2 h是p型Zn（5 nm）/ SnO2（300 nm）/ Zn（5 nm）多层膜的最佳退火参数，其空穴浓度和电阻率为9.80 x 10（16）cm（-3）和352 Omega A中心点cm。在可见光范围内，p型Zn / SnO2 / Zn多层膜的平均透射率高于87％。

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