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首页> 外文期刊>Journal of the Korean Physical Society >Coexistence of Indirect and Direct Optical Transitions, Refractive Indices, and Oscillator Parameters in TlGaS2, TlGaSe2, and TlInS2 Layered Single Crystals
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Coexistence of Indirect and Direct Optical Transitions, Refractive Indices, and Oscillator Parameters in TlGaS2, TlGaSe2, and TlInS2 Layered Single Crystals

机译：TlGaS2，TlGaSe2和TlInS2层状单晶中间接和直接光学跃迁，折射率和振荡器参数的共存

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摘要

The optical properties of TlGaS2; TlGaSe2, and TlInS2 crystals have been investigated through transmission and reflection measurements in the wavelength range of 400 - 1100 nm. Optical indirect and direct band gap energies of 2.45 and 2.63 eV (TlGaS2), 1.97 and 2.26 eV (TlGaSe2), 2.27 and 2.47 eV (TlInS2) were found by analyzing the absorption data at room temperature. The transmission measurements carried out in the temperature range of 10 - 300 K revealed that the rates of change of the indirect band gaps with temperature were gamma = -5.3 x 10(-4), -4.2 x 10(-4), and -9.2 x 10(-4) eV/K for the TlGaS2, TlGaSe2, and TlInS2 crystals, respectively. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive indices, the oscillator and dispersion energies, and the zero-frequency dielectric constants were determined.
机译：TlGaS2的光学性质;通过在400-1100 nm波长范围内的透射和反射测量，研究了TlGaSe2和TlInS2晶体。通过分析室温下的吸收数据，发现间接光带隙能和直接带隙能分别为2.45和2.63 eV（TlGaS2），1.97和2.26 eV（TlGaSe2），2.27和2.47 eV（T1InS2）。在10-300 K的温度范围内进行的透射测量表明，间接带隙随温度的变化率为gamma = -5.3 x 10（-4），-4.2 x 10（-4）和- TlGaS2，TlGaSe2和TlInS2晶体分别为9.2 x 10（-4）eV / K。根据单振荡器模型讨论了折射率的色散。确定了折射率，振荡器和分散能以及零频率介电常数。

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