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首页> 外文期刊>Journal of the Physical Society of Japan >Symmetry of photoexcited states and large-shift Raman scattering in two-dimensional Mott insulators
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Symmetry of photoexcited states and large-shift Raman scattering in two-dimensional Mott insulators

机译：二维Mott绝缘子中光激发态的对称性和大位移拉曼散射

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摘要

Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d(x2-y2)wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly Occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimum-energy excitation in the A(1) (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.
机译：通过将数值精确的对角化方法应用于强耦合极限下的半填充Hubbard模型的有限大小簇，研究了二维Mott绝缘子中具有两个光感应载流子的光激发态的对称性。发现最小能量束缚态的对称性是s波，它与掺杂Mott绝缘子中两孔对的d（x2-y2）波不同。我们证明了差异是由于双重占领地点的运动引起的费米子交换所致。相应地，跨越莫特间隙的大位移拉曼散射在A（1）（s波）通道中表现出最小的能量激发。我们讨论了结果对拉曼散射和其他光学实验的影响。

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